Russian Microelectronics

Publisher: Pleiades Publishing, Ltd.

ISSN PRINT: 1063-7397
ISSN ONLINE: 1608-3415

ABOUT THIS JOURNAL

Journal Metrics

Usage
  • 6574Downloads 2018
    Springer measures the usage on the SpringerLink platform according to the COUNTER (Counting Online Usage of NeTworked Electronic Resources) standards.
  • 22.5 Usage Factor 2017/2018
    The Springer Journal Usage Factor 2017/18 was calculated as suggested by the COUNTER Code of Practice for Usage Factors. It is the median value of the number of downloads in 2017/18 for all articles published online in that particular journal during the same time period. The Usage Factor calculation is based on COUNTER-compliant usage data on the SpringerLink platform. (Counting Online Usage of NeTworked Electronic Resources) standards.

Impact
  • 0.54Source Normalized Impact per Paper (SNIP) 2018
    Source Normalized Impact per Paper (SNIP) measures contextual citation impact by weighting citations based on the total number of citations in a subject field. The impact of a single citation is given higher value in subject areas where citations are less likely, and vice versa.
  • Q3Quartile: Condensed Matter Physics 2018
    The set of journals have been ranked according to their SJR and divided into four equal groups, four quartiles. Q1 (green) comprises the quarter of the journals with the highest values, Q2 (yellow) the second highest values, Q3 (orange) the third highest values and Q4 (red) the lowest values.
  • 0.26 SCImago Journal Rank (SJR) 2018
    SCImago Journal Rank (SJR) is a measure of scientific influence of scholarly journals that accounts for both the number of citations received by a journal and the importance or prestige of the journals where such citations come from.
  • 15H-Index 2018
    A journal has an H index of h if it published h papers each of which has been cited in other journals at least h times. Calculations are based on Scopus.

SCOPE

Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.

READERSHIP

The journal is intended for specialists at research institutes, universities, and other educational establishments; for graduate students; and, to a certain extent, for those working at industrial laboratories.

ABSTRACTING & INDEXING

Chemical Abstracts Service (CAS), Current Contents Collections / Electronics & Telecommunications Collection, EBSCO Academic Search, EBSCO Applied Science & Technology Source, EBSCO Computers & Applied Sciences Complete, EBSCO Discovery Service, EBSCO Engineering Source, EBSCO STM Source, EI Compendex, Gale, Gale Academic OneFile, Gale InfoTrac, Google Scholar, INSPEC, Institute of Scientific and Technical Information of China, Japanese Science and Technology Agency (JST), Naver, OCLC WorldCat Discovery Service, ProQuest Central, ProQuest Engineering, ProQuest Materials Science and Engineering Database, ProQuest SciTech Premium Collection, ProQuest Technology Collection, ProQuest-ExLibris Primo, ProQuest-ExLibris Summon, SCImago, SCOPUS, WTI Frankfurt eG.

CONTACTS

Mikroelektronika
Institute of Physics and Technology
Nakhimovskii pr. 36, Moscow, 117218 Russia
Phone: +7 (499) 125-3826
Fax: +7 (499) 129-3141
E-mail: ponomareval@mail.ru