Vol. 58, No. 6, 2022

Optoelectronics, Instrumentation and Data Processing

Ferromagnetism of Self-Ordered Nanorods ${\alpha}$-FeSi${}_{\mathbf{2}}$ on Vicinal Surface Si(111)-4${}^{{\circ}}$ at a Temperature from 2 to 300 K

N. G. Galkin, D. L. Goroshko, I. A. Tkachenko, K. N. Galkin p. 549 abstract

Transfer of Thin Silicon Films from SiO${}_{\mathbf{2}}$ and HfO${}_{\mathbf{2}}$ to C-Sapphire: Effect of Substrate Thickness on Ferroelectric Properties of Hafnium Dioxide

V. A. Antonov, V. P. Popov, S. M. Tarkov, A. V. Myakon’kikh, A. A. Lomov, K. V. Rudenko p. 556 abstract

Van der Waals Heteroepitaxial Growth of Layered SnSe${}_{\mathbf{2}}$ on Surfaces Si(111) and Bi${}_{\mathbf{2}}$Se${}_{\mathbf{3}}$(0001)

S. A. Ponomarev, K. E. Zakhozhev, D. I. Rogilo, N. N. Kurus’, D. V. Sheglov, A. G. Milekhin, A. V. Latyshev p. 564 abstract

Features of Optical Transitions in GeSiSn/Si Multiple Quantum Wells

V. A. Timofeev, V. I. Mashanov, A. I. Nikiforov, I. V. Skvortsov, I. D. Loshkarev, D. V. Kolyada, D. D. Firsov, O. S. Komkov p. 571 abstract

Investigation of Semiconductor Tunnel-Coupled Quantum Wells

N. N. Rubtsova, A. A. Kovalyov, D. V. Ledovskikh, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin p. 579 abstract

Nonstoichiometric Germanosilicate Films on Silicon for Microelectronics: Memristors and Other Applications

V. A. Volodin, F. Zhang, I. D. Yushkov, L. Yin, G. N. Kamaev p. 584 abstract

A Method for Fast Identification of Orientation Parameters of Multicrystalline Silicon

S. M. Pesherova, E. A. Osipova, A. G. Chueshova, S. S. Kolesnikov, M. Yu. Ryb’yakov, A. A. Kuznetsov, V. L. Arshinskii p. 594 abstract

Analysis of the Experimental Curve of Magnetization of a Silicon Nanosandwich with the Use of Numerical Simulation

V. V. Romanov, V. A. Kozhevnikov, Yu. P. Yashin, N. T. Bagraev, N. I. Rul p. 602 abstract

Gold Drop Formation and Motion over a Si(111) Substrate: Monte Carlo Simulation

S. V. Kudrich, A. A. Spirina, N. L. Shwartz p. 608 abstract

PtSi/poly-Si Structures for IR Detectors: Investigation of the Formation Processes and Development of the Method for Their Fabrication

K. V. Chizh, L. V. Arapkina, V. P. Dubkov, D. B. Stavrovskii, V. A. Yuryev, M. S. Storozhevykh p. 616 abstract

Effect of Rare Earth Coatings on Photoelectric Characteristics of Porous Silicon Structures

N. V. Latukhina, D. A. Nesterov, N. A. Poluektova, D. A. Shishkina, D. A. Uslin p. 626 abstract

IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

S. G. Cherkova, V. A. Volodin, V. A. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat p. 633 abstract

Study of the Dependence of the Refractive Index of Exposed Positive Photoresists on the Conditions of Preliminary Heat Treatment

P. E. Konoshenko, S. L. Mikerin, V. P. Korolkov p. 643 abstract

Contents

Optoelectronics, Instrumentation and Data Processing