Contents
Optoelectronics, Instrumentation and Data Processing
Vol. 56, No. 5, 2020
Etching Kinetics of Si(111) Surface by Selenium Molecular Beam
S. A. Ponomarev, D. I. Rogilo, A. S. Petrov, D. V. Sheglov, A. V. Latyshev p. 449 abstract
Molecular Beam Epitaxy of CdHgTe: Current State and Horizons
V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. G. Remesnik, I. V. Sabinina, Yu. G. Sidorov, V. A. Shvets, M. V. Yakushev, A. V. Latyshev p. 456 abstract
Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn
A. S. Deryabin, A. E. Dolbak, M. Yu. Esin, V. I. Mashanov, A. I. Nikiforov, O. P. Pchelyakov, L. V. Sokolov, V. A. Timofeev p. 470 abstract
New Type of Heterostructures for Powerful pHEMT Transistors
K. S. Zhuravlev, D. Yu. Protasov, A. K. Bakarov, A. I. Toropov, D. V. Gulyaev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii p. 478 abstract
Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation
T. V. Malin, D. S. Milakhin, V. G. Mansurov, A. S. Kozhukhov, D. Yu. Protasov, I. D. Loshkarev, K. S. Zhuravlev p. 485 abstract
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al${}_{\mathbf{2}}$O${}_{\mathbf{3}}$ Grown by Atomic Layer Deposition
G. Yu. Sidorov, D. V. Gorshkov, Yu. G. Sidorov, I. V. Sabinina, V. S. Varavin p. 492 abstract
Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers
E. A. Emel’yanov, M. O. Petrushkov, M. A. Putyato, I. D. Loshkarev, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii p. 498 abstract
Plasmon-Enhanced Vibrational Spectroscopy of Semiconductors Nanocrystals
A. G. Milekhin, T. A. Duda, E. E. Rodyakina, K. V. Anikin, S. A. Kuznetsov, I. A. Milekhin, D. R. T. Zahn, A. V. Latyshev p. 503 abstract
Quantum Information Processing on the Basis of Single Ultracold Atoms in Optical Traps
I. I. Ryabtsev, K. Yu. Mityanin, I. I. Beterov, D. B. Tretyakov, V. M. Entin, E. A. Yakshina, N. V. Al’yanova, I. G. Neizvestnii p. 510 abstract
Subminiature Light Sources Based on Semiconductor Nanostructures
V. A. Gaisler, I. A. Derebezov, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. M. Kachanova, Yu. A. Zhivodkov, A. S. Kozhuhov, D. V. Scheglov, A. V. Latyshev p. 518 abstract
Properties of Quantum Wells and Their Application in Femtosecond Lasers Operating in Near IR Range with Sub GHz Pulse Repetition Rate
N. N. Rubtsova, G. M. Borisov, A. A. Kovalyov, D. V. Ledovskikh, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. A. Kuznetsov, V. S. Pivtsov p. 527 abstract
From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer Metrology
D. V. Sheglov, S. V. Sitnikov, L. I. Fedina, D. I. Rogilo, A. S. Kozhukhov, A. V. Latyshev p. 533 abstract
Transport Properties of Two-Dimensional Topological Insulators and Excitonic Condensates
M. V. Boev, L. S. Braginskii, V. M. Kovalev, L. I. Magarill, M. M. Mahmoodian, M. V. Entin p. 545 abstract
Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator
A. S. Tarasov, V. A. Golyashov, D. V. Ishchenko, I. O. Akhundov, A. E. Klimov, V. S. Epov, A. K. Kaveev, S. P. Suprun, V. N. Sherstyakova, O. E. Tereshchenko p. 553 abstract