Vol. 52, No. 1, 2023
15th International Conference on Micro- and Nanoelectronics October 2–6, 2023 Zvenigorod, Moscow Region, Russia
p. S1 abstract
Natural Edge Bilayer Graphene Transistor
p. S2 abstract
Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs
p. S6 abstract
Investigation of the Influence of the Buffer Layer Design in a GaN HEMT Transistor on the Breakdown Characteristics
p. S14 abstract
Calculation of Electrophysical Characteristics of Semiconductor Quantum Wire Device Structures with One-Dimensional Electron Gas
p. S20 abstract
Memristors Based on GeSixOy Glass Films on p+-Si Substrate
p. S30 abstract
Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide
p. S38 abstract
Flux-Driven Traveling-Wave Parametric Amplifier with bi-SQUIDs Cells
p. S44 abstract
Strontium Iridates as Barrier Materials for Josephson Heterostructures
p. S53 abstract
Atypical Raman Scattering on Magnetic Junctions in Metallic Nanowires
p. S59 abstract
Magnetic Properties of Ni Nanowires in Porous Anodic Alumina Matrix
p. S67 abstract
Artificial Magnetism in Theory of Wave Multiple Scattering by Random Ensemble of Nonmagnetic Spheres with Negative Dielectric Permittivity
p. S71 abstract
New Applications of Thermomigration in Semiconductor Technologies and Optoelectronics Developments (Review)
p. S76 abstract
Photovoltaic Effect in ITO/Germanosilicate Glass/Si Structures
p. S84 abstract
Nanophotonics Devices Functioned in Frame of the X-ray Waveguide-Resonance Propagation Phenomenon
p. S92 abstract
Optical Properties of ZnO–LiNbO3 and ZnO–LiNbO3:Fe Structures
p. S99 abstract
Interaction of Electromagnetic Radiation with a Semiconductor Nanolayer in the Case of an Arbitrary Rotation Axis Orientation of an Constant Energy Ellipsoid
p. S104 abstract
2D Geometrical Parameters of Asymmetric Plasmonic Crescent-Shaped Nanostructures Fabricated with Colloidal Nanolithography
p. S110 abstract
Finite-Element Simulation of the Performance of a Temperature-Compensated Membrane-Based Thermal Flow Sensor
p. S115 abstract
Simulation of the Silicon Sensitive Element of Capacitive Accelerometer Using the Analytical Model
p. S121 abstract
Modeling of Heat Transfer for a Three-Dimensional Microelectromechanical Mirror Element with Consideration of Its Packaging Features
p. S129 abstract
Analysis of the Electrophysical Characteristics of the RF MEMS Switch Taking into Account the Influence of the Substrate Material
p. S134 abstract
Piezoelectric Properties of Nitrogen-Doped Carbon Nanotubes Grown on Refractory Metal Electrodes
p. S139 abstract
Terahertz All-Dielectric Metalens: Design and Fabrication Features
p. S145 abstract
Investigation of the Characteristics of a Wireless Communication System Consisting of Metal Nanoantennas in 50 µM TSV Channel
p. S151 abstract
Development of a Mathematical Apparatus with an Imagery Representation of Information for Neuromorphic Systems
p. S159 abstract
Informational Analytical Platform for Operating the Technological Route of Manufacturing of Microelectronic Devices
p. S163 abstract
Technological Approaches for Formation of High-Density Integral Capacitors: Deep Etching and Atomic Layer Deposition
p. S168 abstract
Sublimation Mechanism for Polishing Silicon Carbide Wafers by Electron Beam
p. S176 abstract
Simulating Longitudinal Temperature Bistability in a Silicon Wafer during Thermal Treatment in a Lamp Chamber
p. S179 abstract
Computer Modeling of Plasma-Enhanced Atomic Layer Deposition of HfO2 and ZrO2
p. S184 abstract
Ion-Assisted Magnetron Deposition of AlN Films
p. S194 abstract
Effect of Vacuum Annealing on Orientation of Fluorite Films on Tilted-Axes Substrates
p. S199 abstract
Electrostatic-Assisted Ultrasonic Spray-Coating for Nanotechnology Applications
p. S209 abstract
Ruthenium for Subtractive and Semi-Damascene Processes of Interconnects Formation
p. S215 abstract
Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys
p. S220 abstract
Investigation of the Features of Metallization Formation for N-MOS Transistor Structures with a Vertical Channel
p. S224 abstract
Technology of Metallization of the Structure of a Semiconductor Device by a Composition of Nanosized Metal Layers
p. S228 abstract
Effect of Surfactant and Solvent on the Pore Structure of Organosilica Glass Film
p. S232 abstract
Investigation of Gas Condensation in Pores of Nanoporous Dielectrics in Cryogenic Etching Conditions
p. S240 abstract
Proposals for Development of the Prospective System for Optical Quality Control of the Assembly of Microelectronic Devices
p. S246 abstract
Research and Analysis of Thermomechanical Stresses in the Structure of a Wafer with Embedded ICs with Consideration of Temperature Effects in Manufacturing Process Route
p. S251 abstract
Study of Topographic Features, Shape, and Mechanical Stresses in Microelectronic Structures Using Geomorphometric Techniques
p. S257 abstract
Digital Shearograph for Detecting Defect in Materials
p. S263 abstract
Ion Beams and X-ray Methods for the Planar Nanostructures Diagnostics
p. S267 abstract
Investigation of Low Energy Electron Irradiated SiO2 Based MOS Devices by Capacitance-Voltage and Thermally Stimulated Current Techniques
p. S274 abstract
Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices
p. S279 abstract
Some Properties of Argon as an Actinometric Atom. I. Metastable Levels Excitation
p. S285 abstract
Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching
p. S290 abstract
A Mass-in-Mass Chain and the Generalization of the Dirac Equation with an Eight-Component Wave Function and with Optical and Acoustic Branches of the Dispersion Relation
p. S299 abstract
Polarization Dynamics and Intensity Fluctuations of a Single-Mode Vertical Cavity Laser with Optical Feedback
p. S306 abstract
Simulation of the Polarization-Resolved Spectra of VCSEL
p. S311 abstract
Blockwise Maximization of the Secret Key with Signal Breaks in Satellite-Based Quantum Key Distribution
p. S317 abstract
Modeling and Improving the Transmission Efficiency of an Optical Beam Splitter Made of Silicon Nitride Si3N4
p. S322 abstract
Peculiarities of Generation of Broadband Two-Photon States in Lithium Niobate Nanowaveguide
p. S327 abstract
Post-Processing of Random Number Generator in InGaAs Contact Photodiode Homodyne Circuit Based on Continuous Wavelet Transform to Improve NIST Longest Run Test Pass Rate
p. S332 abstract
Nonequilibrium Diagram Technique Applied to the Electronic Transport via Tightly Bound Localized States
p. S337 abstract
A Method to Compute QAOA Fixed Angles
p. S352 abstract
Correction of Quantum State Readout Statistics Using the Fuzzy Measurements Model
p. S357 abstract
High-Precision Quantum Measurements of Qudits Taking into Account the Influence of Amplitude and Phase Relaxation
p. S363 abstract
Hybrid Atom-Ion Quantum Gate Engineering
p. S369 abstract
Generator of Electromagnetic Pulses by an Array of Josephson Qubits with Hybrid Coupling to a Resonator
p. S373 abstract
Quantum Algorithm for Searching of Two Sets Intersection
p. S379 abstract
Quantum Circuit for Random Forest Prediction
p. S384 abstract
Efficient Implementation of Amplitude Form of Quantum Hashing Using State-of-the-Art Quantum Processors
p. S390 abstract
Enhancing Efficiency of the Fast Quantum Memory on Single-Atom in Cavity
p. S395 abstract
Constant-Depth Algorithm for Quantum Hashing
p. S399 abstract
Generation of Nonmaximally Entangled States between BECs with Quantum Optimal Control Methods
p. S403 abstract
Comparative Study of LQU and LQFI Measures of Quantum Correlations in Two-Spin-1/2 Heisenberg Systems
p. S412 abstract
Quantum Control by the Environment: Turing Uncomputability, Optimization over Stiefel Manifolds, Reachable Sets, and Incoherent GRAPE
p. S419 abstract
Incoherent GRAPE for Optimization of Quantum Systems with Environmentally Assisted Control
p. S424 abstract
Quantum Control Landscapes and Traps
p. S428 abstract