Contents

Russian Microelectronics

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Vol. 52, No. 8, 2023

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Effect of Nanosecond Ultraviolet Laser Pulses on the Surface of Germanium Single Crystals

V. Yu. Zheleznov, T. V. Malinskii, V. E. Rogalin, Yu. V. Khomich, V. A. Yamshchikov, I. A. Kaplunov and A. I. Ivanova p. 741  abstract

Influence of Technological Parameters during Multiwire Cutting of GaAs Ingots on the Surface Characteristics of the Plates

D. A. Podgorny, M. S. Nestyurkin and N. Yu. Komarovskiy p. 750  abstract

Determination of the Polarization Plane Specific Rotation in Gyrotropic Crystals of the Middle Category by the Spectrophotometric Method

E. V. Zabelina, R. Shahin, N. S. Kozlova and V. M. Kasimova p. 757  abstract

Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz

D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova and V. G. Kosushkin p. 764  abstract

Method for Calculating a Thermal-Expansion-Induced Mechanical Stress in Three-Dimensional Solid-State Structures Using Mathematical Modeling

K. A. Ivanov, E. V. Kaevitser and A. A. Zolotarev p. 771  abstract

Mathematical Modeling of the Metrical Parameters of Hexagonal Closely Packed Metals

P. A. Sechenykh p. 782  abstract

Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies

A. Yu. Morozov, K. K. Abgaryan and D. L. Reviznikov p. 786  abstract

Failure-Tolerant Self-Timed Circuits

A. A. Zatsarinny, Yu. A. Stepchenkov, Yu. G. Diachenko, Yu. V. Rogdestvenski and L. P. Plekhanov p. 793  abstract

Fundamentally New Approaches for Solving Thermophysical Problems in the Field of Nanoelectronics

V. I. Khvesyuk, A. A. Barinov, B. Liu and W. Qiao p. 798  abstract

Quantum Mechanical Simulation of Polarization Switching in HfO₂ Crystals

A. A. Zhuravlev, K. K. Abgaryan and D. L. Reviznikov p. 805  abstract

The Relevance of the Problem of Synthesis of New Materials in Conditions of Innovative Industrial Development

A. A. Zatsarinnyy and K. K. Abgaryan p. 810  abstract

Formation of Defects Forming Deep Levels in SiON/AlGaN/GaN Structures

K. L. Enisherlova, I. A. Mikhaylov, L. A. Seidman, E. P. Kirilenko and Yu. V. Kolkovsky p. 817  abstract

Study of the Abnormally High Photocurrent Relaxation Time in α-Ga₂O₃-Based Schottky Diodes

I. V. Schemerov, A. Yu. Polyakov, A. V. Almaev, V. I. Nikolaev, S. P. Kobeleva, A. A. Vasilyev, V. D. Kirilov, A. I. Kochkova, V. V. Kopiev and Yu. O. Kulanchikov p. 827  abstract

Application of Al₂O₃ Film for Stabilization of the Charge Properties of the SiO₂/p-Si Interface

A. S. Kim, N. A. Serko, P. E. Khakuashev, A. N. Kolky and S. Yu. Yurchuck p. 835  abstract

A Neutron Source for Studying Biological Objects Formed from Superficially Touching Cones Made of Borated Spheroplastics

V. V. Siksin p. 842  abstract

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