Contents

Russian Microelectronics

Vol. 47, No. 8, 2018

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review

K. I. Tapero p. 539  abstract

Polysilicon Market Development and Production Technologies

V. V. Mitin and A. A. Kokh p. 553  abstract

Studying Phase Equilibria in the Zn–Se–Fe Ternary System for Laser Applications

M. P. Zykova, V. Yu. Krolevetskaya, E. N. Mozhevitina, E. M. Gavrishchuk and I. Kh. Avetistov p. 559  abstract

Study of the Plastic Formation in the Production of Thermoelectric Material Based on Bismuth Telluride

D. I. Bogomolov, V. T. Bublik, N. A. Verezub, A. I. Prostomolotov and N. Yu. Tabachkova p. 566  abstract

Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency

A. I. Shaikhaliev, A. A. Polisan, S. Yu. Ivanov, D. A. Kiselev, Yu. N. Parkhomenko, M. D. Malinkovich, I. V. Cherkesov, A. A. Temirov and S. A. Molchanov p. 575  abstract

Optimization Problems of Nanosized Semiconductor Heterostructures

K. K. Abgaryan p. 583  abstract

Electromagnetic and Mechanical Properties of the Nanocomposites of Polyacrylonitrile/Carbon Nanotubes

L. V. Kozhitov, A. V. Shadrinov, D. G. Muratov, E. Yu. Korovin and A. V. Popkova p. 589  abstract

Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron

T. F. Rusak, K. L. Enisherlova, A. V. Lutzau, V. V. Saraykin and V. I. Korneev p. 598  abstract

Formation of Charge Pumps in the Structure of Photoelectric Converters

V. V. Starkov, V. A. Gusev, N. O. Kulakovskaya, E. A. Gosteva and Yu. N. Parkhomenko p. 608  abstract

Experimental Support of the Magnetron Nickel Oxide Cathode Fabrication Process

I. Yu. Kuchina, N. I. Polushin, E. S. Zakharova, I. P. Li, V. S. Petrov, V. I. Kapustin and N. E. Ledentsova p. 613  abstract

Modeling the Energy Structure of a GaN p–i–n Junction

F. I. Manyakhin and L. O. Mokretsova p. 619  abstract

On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth

A. V. Artamonov, V. P. Astakhov, I. B. Warlashov, P. D. Gindin, N. I. Evstafieva, P. V. Mitasov and I. N. Miroshnikova p. 624  abstract