Contents
Russian Microelectronics

Vol. 43, No. 8, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Impurity Accumulation in an Adsorption Layer during MBE Doping

Yu. Yu. Hervieu p. 519  abstract

New Hybrid Materials for Organic Light-Emitting Diode Devices

R. I. Avetisov, O. B. Petrova, A. A. Akkuzina, A. V. Khomyakov, R. R. Saifutyarov,
A. G. Cherednichenko, T. B. Sagalova, N. A. Makarov, and I. Kh. Avetisov p. 526  abstract

Formation and Structure of Mesoporous Silicon

N. I. Kargin, A. O. Sultanov, A. V. Bondarenko, V. P. Bondarenko,
S. V. Red’ko, and A. S. Ionov p. 531  abstract

Formation of Bidomain Structure in Lithium Niobate Plates
by the Stationary External Heating Method

A. S. Bykov, S. G. Grigoryan, R. N. Zhukov, D. A. Kiselev, S. V. Ksenich,
I. V. Kubasov, M. D. Malinkovich, and Yu. N. Parkhomenko p. 536  abstract

Formation of Ferroelectic Domain Stuctures in LiTaO₃ Crystals Formed
by Direct Electron-Beam Repolarization

D. V. Roschupkin, E. V. Emelin, and O. A. Buzanov p. 543  abstract

Statistical Analysis of Germanium Influence on Radiation and Thermal Stability
of the n–p–n–p Device Structures Based on CZ-SiP,Ge Electrophysical Properties

S. V. Bytkin, T. V. Kritskaya, and S. P. Kobeleva p. 546  abstract

Electrophysical and Photoelectrical Properties of MIS Structures Based on MBE Grown
Heteroepitaxial HgCdTe MIS Structures with Inhomogeneous Composition Distribution

A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadookh p. 552  abstract

Photoelectric Converters in a System with Spectral Splitting of the Solar Energy

S. Yu. Kurin, V. D. Doronin, A. A. Antipov, B. P. Papchenko, H. Helava,
M. I. Voronova, A. S. Usikov, Yu. N. Makarov, and K. B. Eidel’man p. 559  abstract

Influence of Conditions of Growth on the Structural Perfection of AlN Layers Obtained
by the MOS-Hydride Epitaxy Method

A. V. Mazalov, D. R. Sabitov, V. A. Kureshov, A. A. Padalitsa,
A. A. Marmalyuk, and R. Kh. Akchurin p. 565  abstract

Technological Features of the Formation of Transparent Conductive Contacts
of ITO Film for LEDs Based on Gallium Nitride

K. D. Vanyukhin, R. V. Zakharchenko, N. I. Kargin, and L. A. Seidman p. 569  abstract

On the Temperature Dependence of Silicon Quantum Dot Photoluminescence

S. N. Nagornykh, V. I. Pavlenkov, A. N. Mikhaylov, A. I. Belov, V. A. Burdov,
L. V. Krasilnikova, D. I. Kryzhkov, and D. I. Tetelbaum p. 575  abstract

Integrated–Differential Method of Thermal Spectroscopy of Energy Levels
in Semiconductors by Their Charge Trap

F. I. Manyakhin p. 581  abstract

Applying the In Situ X-Ray Reflectometry Method to Define the Nanodimensional
Silicon Film Parameters

I. S. Smirnov, E. G. Novoselova, A. A. Egorov, and I. S. Monakhov p.587  abstract

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