Contents
Russian Microelectronics

Vol. 42, No. 8, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

New Organometallic Precursors and Processes for Chemical Vapor Deposition
in the Technology of Nanomaterials

F. A. Kuznetsov, T. P. Smirnova, N. I. Fainer, N. B. Morozova, and I. K. Igumenov p. 439  abstract

Thermoelectric Properties of the (Bi,Sb)₂Te₃-Based Material Obtained by Spark Plasma Sintering

I. A. Drabkin, V. V. Karataev, V. B. Osvenskii, Yu. N. Parkhomenko, A. I. Sorokin,
L. P. Bulat, G. I. Pivovarov, V. T. Bublik, and N. Yu. Tabachkova p. 448  abstract

Isotopic Effects in the Infrared Absorption Spectra of Electrically Active Impurities
in Silicon 28, 29, and 30 with High Isotopic Enrichment

T. V. Kotereva, A. V. Gusev, V. A. Gavva, and E. A. Kozyrev p. 453  abstract

Initiation of a Polarized State in Thin Lithium Niobate Films Synthesized
on Isolated Silicon Substrates

D. A. Kiselev, R. N. Zhukov, A. S. Bykov, M. D. Malinkovich,
Yu. N. Parkhomenko, and E. A. Vygovskaya p. 458  abstract

Promising Materials of Acoustoelectronics

D. V. Roshchupkin, D. V. Irzhak, E. V. Emelin, R. R. Fakhrtdinov,
O. A. Buzanov, and S. A. Sakharov p. 463  abstract

Features of Defect Formation under the Thermal Treatment of Dislocation-Free Single-Crystal
Large-Diameter Silicon Wafers with the Specified Distribution of Oxygen-Containing
Gettering Centers in the Bulk

Yu. B. Vasil’ev, N. A. Verezub, M. V. Mezhennyi, V. S. Prosolovich,
A. I. Prostomolotov, and V. Ya. Reznik p. 467  abstract

New Trends in the Development of the Technology for the Production
of Ultraviolet Light-Emitting Diodes

S. Yu. Kurin, A. A. Antipov, I. S. Barash, V. T. Bublik, H. Helava, E. N. Mokhov,
S. S. Nagalyuk, A. D. Roenkov, T. Yu. Chemekova,
K. D. Scherbatchev, and Yu. N. Makarov p. 477  abstract

Studying the Uniformity of the Surface Resistance of Ti, Al, Ni, Cr,
and Au Metal Films on Silicon

K. D. Vanyukhin, S. P. Kobeleva, Yu. A. Kontsevoi, V. A. Kurmachev, and L. A. Seidman p. 483  abstract

Mechanisms of Electroconductivity in Silicon–Carbon Nanocomposites
with Nanosized Tungsten Inclusions within a Temperature Range of 20–200C

I. M. Anfimov, S. P. Kobeleva, M. D. Malinkovich, I. V. Shchemerov,
O. V. Toporova, and Yu. N. Parkhomenko p. 488  abstract

Studying the Formation of Nanoporous and Nanotubular Titanium Layers
by Electrochemical Impedance Spectroscopy

L. A. Balagurov, M. A. Agafonova, E. A. Petrova, and A. G. Yakovenko p. 492  abstract

Novel Metal Carbon Nanocomposites and Carbon Nanocrystalline Material
with Promising Properties for the Development of Electronics

L. V. Kozhitov, V. V. Kozlov, A. V. Kostikova, and A. V. Popkova p. 498  abstract

A Nanodimensional Silicon Fabricated Using HCl : HF : C₂H₅OH Electrolyte

Yu. N. Parkhomenko, A. I. Belogorokhov, A. P. Bliev, V. G. Sozanov p.508  abstract

Demonstration of the Bragg Diffraction of Light by a 2D-Photon Structure

E. K. Naimi p. 512  abstract

Study of Heterostructures According to Single-Crystal X-ray Diffractometry

A. V. Lyutsau, M. M. Krymko, K. L. Enisherlova, E. M. Temper, and I. I. Razgulyaev p. 517  abstract

Photoluminescence Spectra of Cd_xHg_1–xTe Quantum-Well Heterostructures

D. I. Gorn, A. V. Voitsekhovskii, and I. I. Izhnin p. 525  abstract

A Method for Determining the State of the Silicon–Sapphire Boundary
in Thin Silicon-on-Sapphire Layers

S. V. Tikhov, D. A. Pavlov, and N. O. Krivulin p.529  abstract

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