Vol. 45, No. 8-9, 2016
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.
Prospects of the Polysilicon Market
p. 537 abstract
Formation of Three-Dimensional Structures in the Silicon Carbide Substrates by Plasma-Chemical Etching
p. 545 abstract
The Nature of Thermoacceptors in Electron-Irradiated High-Resistance Silicon
p. 559 abstract
Directed Crystallization of Multicrystalline Silicon under Weak Melt Convection and Gas Exchange
p. 562 abstract
The Development of a Purification Technique of Metallurgical Silicon to Silicon of the Solar Brand
p. 570 abstract
Investigation of Ion-Electron Emission in the Process of Reactive Ion-Beam Etching of Dielectric Thin Film Heterostructures
p. 576 abstract
Formation of a Bidomain Structure in Lithium Niobate Wafers for Beta-Voltaic Alternators
p. 582 abstract
A Study of Magnetic and Electronic Hyperfine Interactions in Epitaxial Film of Yttrium-Iron Garnet by the Method of Conversion Electron Mössbauer Spectroscopy
p. 587 abstract
The Effect of the Base Composition and Microstructure of Nickel-Zinc Ferrites on the Level of Absorption of Electromagnetic Radiation
p. 593 abstract
Theoretical Investigation of the Electronic and Structural Properties of AlN Thin Films
p. 600 abstract
High Efficiency Photoelectrodes Based on Porous Silicon
p. 603 abstract
Photosensitive Heterostructures Based on Porous Nanocrystalline Silicon
p. 613 abstract
Surface Dipole Ordering in Submicron Polydiphenylenephthalide Films
p. 619 abstract
Influence of the Yttria Dopant on the Structure and Properties of (ZrO2)0.91 – x(Sc2O3)0.09(Y2O3)х (x = 0–0.02) Crystals
p. 625 abstract