Vol. 47, No. 7, 2018

Russian Microelectronics

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers

E. N. Vigdorovich p. 449 abstract

Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications

V. D. Kravtsova, M. B. Umerzakova, N. E. Korobova and D. V. Vertyanov p. 455 abstract

Structural Strength and Temperature Condition of Multi-Chip Modules

A. I. Pogalov, G. A. Blinov and E. Yu. Chugunov p. 460 abstract

An Integrated High-Capacitance Varicap Based on Porous Silicon

S. P. Timoshenkov, A. N. Boyko, D. S. Gaev and R. M. Kalmykov p. 465 abstract

Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors

D. S. Silkin and V. P. Paderov p. 468 abstract

Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors

M. O. Hrapov, A. V. Gluhov, V. A. Gridchin and S. V. Kalinin p. 472 abstract

Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices

A. V. Solov’ev, T. U. Krupkina and A. M. Lagun p. 479 abstract

The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors

M. A. Korolev, A. V. Kozlov, A. Y. Krasukov and S. S. Devlikanova p. 483 abstract

TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures

K. O. Petrosyants, D. A. Popov and D. V. Bykov p. 487 abstract

Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect

V. A. Sergeev and A. M. Hodakov p. 494 abstract

Design Automation Technique of Silicon Bandgap Voltage Reference

V. G. Ivanov and V. V. Losev p. 498 abstract

A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders

A. A. Starykh and A. V. Kovalev p. 504 abstract

Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors

Yu. Yu. Razuvaev p. 510 abstract

Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip

S. V. Gavrilov, D. A. Zheleznikov and V. M. Khvatov p. 516 abstract

Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits

D. A. Bulakh, G. G. Kazennov and A. V. Lapin p. 522 abstract

Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators

V. V. Gruzdov, K. L. Enisherlova, Y. V. Kolkovsky, N. V. Davydov and S. A. Kapilin p. 526 abstract

Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator

D. A. Usanov, M. K. Merdanov, A. V. Skripal, R. V. Zotov, B. N. Korotin and D. V. Ponomarev p. 532 abstract

Contents

Russian Microelectronics