Contents
Russian Microelectronics

Vol. 42, No. 7, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Wireless Magnetoresistive Microsystem for Magnetic Field Measurements

V. V. Amelichev, A. N.Saurov, V. V. Aravin, A. A. Reznev,
A. A. Demin, and M. V. Khokhlov p. 363  abstract

Technology and Electric Characteristics of the Field-Effect Hall Sensor
Based on SOI Structure

L. N. Dolgyi, I. Yu. Lovshenko, and V. V. Nelayev p. 368  abstract

A Threshold Position-Sensitive Photoswitch with Negative Differential Resistance

E. V. Lychagin, S. G. Novikov, and N. T. Gurin p. 373  abstract

Effect of the Design and Manufacture Parameters on the Characteristics
of a Triple-Collector Bipolar Magnetotransistor

A. V. Kozlov, M. A. Korolev, A. A. Cheremisinov, A. A. Zhukov, and R. D. Tikhonov p. 378  abstract

Mathematical Models and Hardware & Software for Highly Accurate
Electronic Temperature Meters

Yu. I. Shtern, Ya. S. Kozhevnikov, V. M. Rykov, and R. E. Mironov p. 384  abstract

Signal Conditioning Circuitry in Ultrahigh-Speed Photoelectric Raster Interpolators

V. B. Topil’skii p. 389  abstract

The Analysis of the Performance of Nanometer Intellectual Property Blocks
Based on Interval Simulation

S. V. Gavrilov, O. N. Gudkova, and A. L. Stempkovskiy p. 396  abstract

Use of the Effect of Phase Error Accumulation in Ring Oscillators to Estimate
Time Parameters of Digital Elements of Integrated Circuits

S. O. Churayev p. 403  abstract

CMOS-Operational Amplifier with n-Channel Output Followers,
Increased Gain, and Short Settling Time

A. B. Makarov p. 408  abstract

Procedure of Calculating Parameters of Sense Amplifiers for the EEPROM
and Flash Memory

E. S. Vasil’ev p. 414  abstract

Laser Simulation of Volume Ionization Effects in Submicron VLSI circuits

P. K. Skorobogatov p. 420  abstract

Features of Energy Release in Microvolumes of VLSI Elements upon the Effect
of Neutron Radiation

A. I. Chumakov, A. V. Afonin, and V. A. Polunin p. 424  abstract

Probe Measurements of the Potential Distribution in Anisotropic
Semiconductor Crystals and Films

V. V. Filippov and A. N. Vlasov p. 428  abstract

Probe Studies of Plasma Characteristics in the ICP Reactor

A. I. Vinogradov, N. M. Zaryankin, and S. P. Timoshenkov p.433  abstract

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