Contents
Russian Microelectronics

Vol. 38, No. 6, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Personalia

Happy 85th Anniversary! p. 363

Device and Process Modeling
and Simulation

Nano- and Micrometer-Scale Thin-Film-Interconnection Failure Theory and Simulation
and Metallization Lifetime Prediction, Part 1: A General Theory of Vacancy Transport,
Mechanical-Stress Generation, and Void Nucleation under Electromigration
in Relation to Multilevel-Metallization Degeneration and Failure

K. A. Valiev, R. V. Goldstein, Yu. V. Zhitnikov, T. M. Makhviladze, and M. E. Sarychev p. 364  abstract

Simulation of the Effects of Deep Grooving in Silicon in the Plasmochemical Cyclic Process

A. S. Shumilov, I. I. Amirov, and V. F. Lukichev p. 385  abstract

A Semianalytical Model of a Thin-Channel Field-Effect Transistor

A. N. Khomyakov and V. V. V’yurkov p. 393  abstract

Quantum Computing

Nonequivalence of Biparticle and Multiparticle Quantum Entanglements

A. Yu. Chernyavskii p. 406  abstract

Constructivist Treatment of Bell’s Inequality Violations and the No-Hidden-Variable Theorems

Y. I. Ozhigov p. 409  abstract

Process Characterization

Positronics and Nanotechnologies: Possibilities of Studying Nanoobjects
in Critical Engineering Materials Using Positron Annihilation Spectrometry

V. I. Grafutin, E. P. Prokop’ev, S. P. Timoshenkov, S. S Evstaf’ev, and S. S. Funtikov p. 418  abstract

Thin Films

Quantum State Depressions in Thin Metal Films with an Indented Surface

A. N. Tavkhelidze, A. P. Bibilashvili, L. B. Jangidze, B. B. Olsen, H. Walitzki, A. Feinerman p. 429  abstract

Author Index to Volume 38, 2009 p. 434

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