Contents
Russian Microelectronics

Vol. 37, No. 6, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Thin Films

Initial Stage of Semiinsulating Polycrystalline Silicon Film Growth

A. S. Turtsevich, O. Yu. Nalivaiko, V. A. Solodukha, V. V. Glukhmanchuk,
N. G. Tsirkunova, and G. V. Lepeshkevich p. 349  abstract

Formation and Some Properties of Chromium Oxide Nanolayers on Semiconductors

Yu. K. Ezhovskii and V. Yu. Kholkin p. 356  abstract

Micro- and Nanostructure Modeling

Elastic-Stress Relaxation in Heteroepitaxial Structures Investigated by Computer Simulation

O. S. Trushin p. 363  abstract

High-Frequency Admittance of a Thin Circular Metal Wire

E. V. Zavitaev and A. A. Yushkanov p. 373  abstract

Numerical Simulation of Two-Particle Resonant Scattering with the Formation of a Molecular Ion

K. S. Arakelov p. 382  abstract

Nanostructure Science

Geometric Aspects of AFM Imaging

Yu. A. Novikov, A. V. Rakov, and P. A. Todua p. 390  abstract

Circuit Analysis and Synthesis

Fully Depleted SOI CMOS Logic Gates for Low-Voltage Applications

N. V. Masal’skii p. 410  abstract

Information for Authors p. 418

Author Index to Volume 37, 2008 p. 420

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