Contents
Russian Microelectronics

Vol. 36, No. 6, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Nanolithography

Photoassisted Scanning-Probe Nanolithography on Ti Films

O. A. Ageev, B. G. Konoplev, V. V. Polyakov, A. M. Svetlichnyi, and V. A. Smirnov p. 353  abstract

Thin Films

Kinetics and Mechanisms of Cl₂ or HCl Plasma Etching of Copper

A. M. Efremov, S. A. Pivovarenok, and V. I. Svettsov p. 358  abstract

Tungstic Acid-Assisted Thermal Oxidation of GaAs

S. S. Lavrushina, I. Ya. Mittova, A. N. Lukin, T. V. Kharitonova, and A. V. Popelo p. 366  abstract

Highly Doped Si/SiO₂/W Sandwich Structures with an Exposed Insulator Edge:
Electrical Transport and Electroforming

V. M. Mordvintsev and S. E. Kudrjavtsev p. 371  abstract

Self-Organized Growth Mechanism for Porous Aluminum Anodic Oxide

A. I. Vorobyova, E. A. Outkina, and A. A. Khodin p. 384  abstract

IC Characterization

Liquid-Crystal Thermography of Hot Spots on Electronic Components

V. M. Popov, A. S. Klimenko, A. P. Pokanevich, I. I. Gavrilyuk, and N. V. Moshel’ p. 392  abstract

Analyzing Conductance–Frequency Curves of Metal–Insulator–Semiconductor
Structures Subject to Surface-Potential Fluctuations and Electrically Active States inside the Insulator

N. A. Avdeev, I. V. Klimov, and R. A. Yakovlev p. 402  abstract

Solid-State Devices and Circuits

New Approach to the Manufacturing of Power Microwave Bipolar Transistors:
A Computer Simulation

Yu. P. Snitovsky, V. V. Nelayev, and V. A. Efremov p. 409  abstract

Reverse I–V Characteristics of a Diode-Connected Heterostructure MESFET

S. B. Burzin, V. I. Starosel’skii, and S. S. Shmelev p. 415  abstract

Information for Authors p. 422

Author Index to Volume 36, 2007 p. 424

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