Contents
Russian Microelectronics

Vol. 32, No. 6, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Circuits

Power Consumption of Quasi-adiabatic Logic Gates

V. V. Losev and V. I. Starosel’skii p. 323  abstract

CMOS Switched-Capacitor Integrator

Yu. B. Rogatkin p. 333  abstract

New Method for Standard-Cell Routing Subject
to Electrical Constraints

A. S. Plekhanov p. 339  abstract

Process Technologies

New Methods for Making the Qubits of a Solid-State Quantum Computer
by Implantation of Single Highly Charged ³¹P Ions

V. A. Zhukov p. 347  abstract

Characterization

Integrated Laser Measuring System for the Ellipsometric
and Photovoltage Characterization of Thin Surface Layers

V. A. Kotenev p. 355  abstract

Surface-Defect Imaging in Optical Topography

S. F. Sen’ko p. 361  abstract

Evaluation of Si-Wafer Chemical Cleaning Procedures
in Terms of Their Effect on Wafer Topography

S. P. Timoshenkov, V. V. Kalugin, and E. P. Prokopiev p. 371  abstract

Micro- and Nanodevices

Quantum Size Effect Due to the Electron Transport
over Bismuth Nanobridges with 2D Electron Gas

A. I. Il’in, L. I. Aparshina, and B. N. Tolkunov p. 377  abstract

Elastically Strained Porous Silicon Layers Formed
on Single-Crystal Substrates

V. D. Skupov and V. K. Smolin p. 382  abstract

Dual-Collector Lateral Bipolar Magnetotransistor:
Carrier Transport and Relative Sensitivity

A. V. Kozlov, M. A. Reveleva, and R. D. Tikhonov p. 385  abstract

Author Index to Volume 32, 2003 p. 391

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