Contents
Russian Microelectronics
Vol. 32, No. 6, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Circuits
Power Consumption of Quasi-adiabatic Logic Gates
V. V. Losev and V. I. Staroselskii p. 323 abstract
CMOS Switched-Capacitor Integrator
Yu. B. Rogatkin p. 333 abstract
New Method for Standard-Cell Routing Subject
to Electrical Constraints
A. S. Plekhanov p. 339 abstract
Process Technologies
New Methods for Making the Qubits of a Solid-State Quantum Computer
by Implantation of Single Highly Charged 31P Ions
V. A. Zhukov p. 347 abstract
Characterization
Integrated Laser Measuring System for the Ellipsometric
and Photovoltage Characterization of Thin Surface Layers
V. A. Kotenev p. 355 abstract
Surface-Defect Imaging in Optical Topography
S. F. Senko p. 361 abstract
Evaluation of Si-Wafer Chemical Cleaning Procedures
in Terms of Their Effect on Wafer Topography
S. P. Timoshenkov, V. V. Kalugin, and E. P. Prokopiev p. 371 abstract
Micro- and Nanodevices
Quantum Size Effect Due to the Electron Transport
over Bismuth Nanobridges with 2D Electron Gas
A. I. Ilin, L. I. Aparshina, and B. N. Tolkunov p. 377 abstract
Elastically Strained Porous Silicon Layers Formed
on Single-Crystal Substrates
V. D. Skupov and V. K. Smolin p. 382 abstract
Dual-Collector Lateral Bipolar Magnetotransistor:
Carrier Transport and Relative Sensitivity
A. V. Kozlov, M. A. Reveleva, and R. D. Tikhonov p. 385 abstract
Author Index to Volume 32, 2003 p. 391
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