Contents

Russian Microelectronics

Vol. 48, No. 6, 2019

Creation and Development of the Ion Beam Technology

Yu. P. Maishev p. 347  abstract

Parameters of Plasma and Way of Etching Silicon in a CF4 + CHF3 + O2 Mixture

A. M. Efremov, D. B. Murin and K.-H. Kwon p. 364  abstract

Simulation of the Effect of the Grain Boundary Structure on Effective Ionic Charges in the Processes of Electromigration

T. M. Makhviladze and M. E. Sarychev p. 373  abstract

Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger Elements

V. Ya. Stenin and Yu. V. Katunin p. 381  abstract

Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working Region

N. V. Masal’skii p. 394  abstract

Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride Surface

V. M. Mordvintsev, V. V. Naumov and S. G. Simakin p. 402  abstract

Estimating the Electric Mode Effect (Active and Passive) on the Dose of Radiation Resistance of Microcircuits

O. A. Kalashnikov p. 409  abstract

Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

M. E. Chernyak, E. V. Ranneva, A. V. Ulanova, A. Yu. Nikiforov, A. I. Verizhnikov, A. M. Tsyrlov, V. S. Fedosov, A. N. Shchepanov, V. D. Kalashnikov and D. O. Titovets p. 415  abstract

Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields

S. M. Asadov, S. N. Mustafaeva and V. F. Lukichev p. 422  abstract

A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer

W. Filali, E. Garoudja, S. Oussalah, M. Mekheldi, N. Sengouga and M. Henini p. 428  abstract