Contents

Russian Microelectronics

Vol. 47, No. 6, 2018

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

E. E. Rodyakina, S. V. Sitnikov, D. I. Rogilo and A. V. Latyshev p. 365  abstract

Parameters of Plasma and Kinetics of Active Particles in CF4 (CHF3) + Ar Mixtures of a Variable Initial Composition

A. M. Efremov, D. B. Murin and K.-H. Kwon p. 371  abstract

Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods

O. S. Trushin, S. G. Simakin, S. V. Vasiliev and E. A. Smirnov p. 381  abstract

Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide Layers

V. I. Egorkin, V. E. Zemlyakov, A. V. Nezhentsev, V. I. Garmash, N. A. Kalyuzhnyi and S. A. Mintairov p. 388  abstract

Operational Features of MEMS with an Even Number of Electrodes

V. P. Dragunov and D. I. Ostertak p. 393  abstract

Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two Groups

V. Ya. Stenin and Yu. V. Katunin p. 407  abstract

Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2 Plasma

A. A. Rezvanov, I. V. Matyushkin, O. P. Gushchin and E. S. Gornev p. 415  abstract

Etching of SiC in Low Power Inductively-Coupled Plasma

A. A. Osipov, S. E. Aleksandrov, Yu. V. Solov’ev, A. A. Uvarov and A. A. Osipov p. 427  abstract

Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture

D. B. Murin and A. V. Dunaev p. 434  abstract

Stacked Gate FinFET with Gate Extension for Improved Gate Control

Sangeeta Mangesh, Pradeep Chopra and Krishan Saini p. 443  abstract