Contents
Russian Microelectronics

Vol. 43, No. 6, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum Calculations on Quantum Dots in Semiconductor Microcavities. Part II

A. V. Tsukanov and I. Yu. Kateev p. 377  abstract

Investigation into the Selectivity of Etching Various Materials by Fast Neutral Particle Beams

Yu. P. Maishev, S. L. Shevchuk, and V. P. Kudrya p. 388  abstract

Effect of Polymer Matrix and Photoacid Generator on the Lithographic Properties
of Chemically Amplified Photoresist

S. A. Bulgakova, D. A. Gurova, S. D. Zaitsev, E. E. Kulikov, E. V. Skorokhodov,
M. N. Toropov, A. E. Pestov, N. I. Chkhalo, and N. N. Salashchenko p. 392  abstract

Kinetics and Modes of Plasmachemical Etching of GaAs under Conditions
of Induction HF Discharge in CF₂Cl₂

A. M. Efremov, D. B. Murin, and A. E. Leventsov p. 401  abstract

Investigation of the BF₃ Plasma Particle’s Lateral Distribution Using Two-View
Emission Tomography

A. V. Fadeev and K. V. Rudenko p. 407  abstract

Self-Organization Process under Electrolytic Formation of Nanostructures
in Silicon-Based Semi-Conducting Systems

N. A. Arzhanova, M. A. Prokaznikov, and A. V. Prokaznikov p. 413  abstract

A Virtual Scanning Electron Microscope. 4. Simulator-Based Implementation

Yu. A. Novikov p. 427  abstract

Electrophysical Properties of Lead Zirconate Titanate Films Doped with Lanthanum

Yu. V. Podgornyi, A. S. Vishnevskii, K. A. Vorotilov, P. P. Lavrov, and A. N. Lantsev p.438  abstract

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