Contents
Russian Microelectronics

Vol. 38, No. 5, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Micro- and Nanostructure Modeling and Simulation

Computer Simulation of the Processes of Formation of Microclusters
on the Basis of Scaling Invariance of Random Walk

A. V. Mozhaev and A. V. Prokaznikov p. 291  abstract

Simulation of Elastic Quantum Scattering at Atomic Collisions
in the Semiclassical Approximation Including Interference Effects

K. S. Arakelov p. 299  abstract

Numerical Modeling of Temperature Fields in the Elements and Units of Electronic Systems

G. V. Kuznetsov and M. A. Sheremet p. 312  abstract

Production-Process Dynamics

Methods of Parallel Integration of Carbon Nanotubes during the Formation of Functional Devices
for Microelectronics and Sensor Technologies

I. I. Bobrinetskii p. 320  abstract

Electrophysical Characteristics of HfO₂ Gate Structures Formed By Electron-Beam Evaporation

A. G. Vasil’ev, R. A. Zakharov, A. A. Orlikovskii, A. E. Rogozhin, M. S. Sonin, and I. A. Khorin p. 327  abstract

Thin Films

Magnetoresistance of Multilayered Structures Obtained by the Magnetron Method

V. V. Naumov and E. Yu. Buchin p. 334  abstract

Deposition of the IV–VI Films by the Hot-Wall Method on Silicon Substrates 100 mm in Diameter

V. I. Rudakov, A. L. Kurenya, A. A. Shornikov, and M. L. Gitlin p. 339  abstract

Semiconductor Devices

Lead-Free Alloy Soldering of Dies

V. V. Zenin, V. I. Baiko, O. V. Marchenko, V. I. Frolov, and O. V. Khishko p. 345  abstract

A Device for Controlling the Voltage Standing-Wave Ratio of Microwave Attenuators

S. N. Grigor’ev p. 354  abstract

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