Contents
Russian Microelectronics
Vol. 37, No. 5, 2008
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.
Thin Films
Magnetic Structure and Magnetoresistance of Patterned Epitaxial Iron Thin Films:
The Influence of Shape and Magnetocrystalline Anisotropy
L. A. Fomin, I. V. Malikov, V. Yu. Vinnichenko, and G. M. Mikhailov p. 283 abstract
Materials and Microstructure Characterization
Role of Deep-Level Centers in Compensated Semi-insulating GaAs
V. V. Katsoev, L. V. Katsoev, and E. A. Il’ichev p. 296 abstract
Synthesis and Use of Anodic Borosilicate Diffusion Sources
I. L. Baranov, L. V. Tabulina, L. S. Stanovaya, T. G. Rusal’skaya, and Yu. A. Shostak p. 302 abstract
Quantum-Computing Devices
Investigation into the Statistical Nature of Bell’s Inequalities
Yu. I. Bogdanov p. 308 abstract
Process Technologies
Electrode Geometry as Dependent on Electrolyte Temperature in Thick Cu Film Electrodeposition
for Making Tunnel Multilayer Structures
L. B. Jangidze, A. N. Tavkhelidze, Yu. M. Blagidze, and R. G. Gulyaev p. 322 abstract
Influence of Metallization Impedance on the Current Distribution along the Conducting Tracks
from a FET Operated in Saturation
V. A. Sergeev p. 327 abstract
Solid-State Devices
Sign of Bipolar-Magnetotransistor Sensitivity as Dependent on Device Structure
R. D. Tikhonov p. 334 abstract
Information for Authors p. 346
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