Contents
Russian Microelectronics

Vol. 37, No. 5, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Thin Films

Magnetic Structure and Magnetoresistance of Patterned Epitaxial Iron Thin Films:
The Influence of Shape and Magnetocrystalline Anisotropy

L. A. Fomin, I. V. Malikov, V. Yu. Vinnichenko, and G. M. Mikhailov p. 283  abstract

Materials and Microstructure Characterization

Role of Deep-Level Centers in Compensated Semi-insulating GaAs

V. V. Katsoev, L. V. Katsoev, and E. A. Il’ichev p. 296  abstract

Synthesis and Use of Anodic Borosilicate Diffusion Sources

I. L. Baranov, L. V. Tabulina, L. S. Stanovaya, T. G. Rusal’skaya, and Yu. A. Shostak p. 302  abstract

Quantum-Computing Devices

Investigation into the Statistical Nature of Bell’s Inequalities

Yu. I. Bogdanov p. 308  abstract

Process Technologies

Electrode Geometry as Dependent on Electrolyte Temperature in Thick Cu Film Electrodeposition
for Making Tunnel Multilayer Structures

L. B. Jangidze, A. N. Tavkhelidze, Yu. M. Blagidze, and R. G. Gulyaev p. 322  abstract

Influence of Metallization Impedance on the Current Distribution along the Conducting Tracks
from a FET Operated in Saturation

V. A. Sergeev p. 327  abstract

Solid-State Devices

Sign of Bipolar-Magnetotransistor Sensitivity as Dependent on Device Structure

R. D. Tikhonov p. 334  abstract

Information for Authors p. 346

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