Contents
Russian Microelectronics

Vol. 36, No. 5, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Nanolithography

Using a Chromatic-Aberration Correction System to Achieve Sub-1.6-nm Resolutions
of a Focused-Ion-Beam Microscope Designed for Characterization and Processing

V. A. Zhukov, A. I. Titov, and A. V. Zav’yalova p. 279  abstract

Simulation of Semiconductor Devices, Integrated Circuits,
and Technological Processes

Transformations of Porous Layers upon High-Temperature Annealing: Simulation

T. B. Govorukha, A. V. Zverev, I. G. Neizvestny, N. L. Shwartz, and Z. Sh. Yanovitskaya p. 288  abstract

Device and Circuit Modeling

The Algorithmic Model of a Pipelined Analog-to-Digital Converter

Yu. B. Rogatkin p. 299  abstract

Thin Films

Strain Transmission from a Substrate to a Piezoresistive Mesa

V. M. Lubimsky p. 305  abstract

Control of the Adhesion Strength of Thin Metal Films in Multilayer Structures

Z. I. Taliashvili, L. R. Vardosanidze, L. B. Jangidze, and A. N. Tavkhelidze p. 313  abstract

Plasmochemical Etching

Specific Features of Intensification of Silicon Etching in CF₄/O₂ Plasma

Yu. N. Grigoryev and A. G. Gorobchuk p. 321  abstract

Aspect-Ratio-Independent Anisotropic Silicon Etching in a Plasma Chemical Cyclic Process

O. V. Morozov and I. I. Amirov p. 333  abstract

Circuit Design

Sample-and-Hold Circuits for High-Speed A/D Converters

A. S. Gumenyuk and Yu. I. Bocharov p. 342  abstract

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