Contents
Russian Microelectronics

Vol. 35, No. 5, 2006

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum-Computing Devices

High-Dielectric-Constant Medium Used to Increase Qubit Spacing

A. E. Klimov, V. A. Nadolinnyi, I. G. Neizvestny,
S. P. Suprun, Yu. A. Tsidulko, and V. N. Shumsky p. 277  abstract

Modeling the ESR Spectra of a Zn–P Two-Spin System in Si:
The Structure of the Semiempirical Relaxation Operator Incorporated
in the Quantum Liouville Equation

S. N. Dobryakov^† and V. V. Privezentsev p. 285  abstract

Process Technologies

New Vistas for Diamond as an Electronic Material

V. Yu. Karasev, V. D. Kryukov, S. M. Pintus, M. G. Kuznetsov,
A. A. Lykov, and B. A. Belov p. 291  abstract

Evaluation of Focused O⁺ Ion Beams as a Tool for Making Resist Masks by Reactive Etching

V. A. Zhukov, A. I. Titov, N. T. Bagraev, and M. M. Nesterov p. 298  abstract

Effect of Ionizing Irradiation and Thermal Annealing on the Entropy
of the Atomic System of a SiO₂ Film

V. D. Popov and G. A. Protopopov p. 304  abstract

Structure, Shape, and Orientation of an Island Adsorbed
on a Single-Crystal Surface in the Case of Lattice Mismatch

Yu. N. Devyatko, S. V. Rogozhkin, and A. V. Fadeev p. 310  abstract

Radiation Effects on Advanced GaAs Devices

Structure of Neutron-Induced Defect Clusters in GaAs MESFETs

E. V. Kiseleva and S. V. Obolenskii p. 322  abstract

Modeling and Simulation

X-ray or UV Adjustment of MOS Threshold Voltage: Analytical and Numerical Modeling

M. N. Levin, A. V. Tatarintsev, V. A. Makarenko, and V. R. Gitlin p. 329  abstract

Circuit Analysis and Synthesis

Transistor-Degradation Prediction by Time-Series Analysis

M. I. Gorlov, A. V. Strogonov, and D. Yu. Smirnov p. 337  abstract

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.