Contents
Russian Microelectronics

Vol. 34, No. 5, 2005

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Personalia

The 50th Anniversary of the Ministry of Defense’s
22 TsNIII Research Institute: Its Contributions to the National Microelectronics

V. A. Telets p. 269

Nanostructure Characterization

Structural and Luminescent Properties of SiO_xN_y(Si) Nanocomposite Films

V. G. Baru, S. Bayliss, V. A. Zhitov, L. Yu. Zakharov, G. Kartopu,
V. I. Pokalyakin, A. Sapelkin, G. V. Stepanov^†, A. A. Timofeev, and O. F. Shevchenko p. 272  abstract

Mössbauer-Spectroscopy Characterization of Nanostructured Magnetic Materials

N. P. Aksenova and M. A. Chuev p. 279  abstract

Sustaining Mechanisms of the ECR Heating of Electrons in Low-Pressure Microwave Plasmas
under Magnetic Multipole Confinement

A. B. Petrin p. 295  abstract

Materials and Microstructure Characterization

Tip-Shape Reconstruction for a Laterally Vibrating SPM Probe

A. P. Chuklanov, A. A. Bukharaev, and P. A. Borodin p. 309  abstract

Method for the Microwave Measurement of Carrier Lifetime
in Lightly Doped Silicon Ingots

P. A. Borodovskii, A. F. Buldygin, A. S. Tokarev, and E. V. Chernyavskii p. 316  abstract

Process Technologies

ESR Study of P-doped, Zn-compensated Si Single Crystals

S. N. Dobryakov, B. V. Kornilov, and V. V. Privezentsev p. 325  abstract

Circuit Analysis and Synthesis

Engineering Approach to CMOS-Logic Optimization Allowing for Internal Capacitances
and On-Chip Interconnections

A. V. Butuzov and G. V. Kristovskii p. 328  abstract

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