Contents
Russian Microelectronics

Vol. 32, No. 5, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Process Technologies

Deep-Level Effects in GaAs Microelectronics: A Review

N. P. Khuchua, L. V. Khvedelidze, M. G. Tigishvili, N. B. Gorev,
E. N. Privalov, and I. F. Kodzhespirova p. 257  abstract

Phase Formation in a Ta–Ni–N Thin Film during Its Electron-Beam Evaporation Deposition
on a Heated Si(100) Substrate

A. G. Vasiliev, A. L. Vasiliev, R. A. Zakharov, A. A. Orlikovsky,
I. A. Horin, and M. Eindou p. 275  abstract

Novel Ion-Lens Configurations: A Further Step to 2-nm Ion-Beam Lithography

V. A. Zhukov and M. M. Nesterov p. 282  abstract

Stationary High-Field Domain in Si : Zn at the Excitation Threshold of Recombination Waves

A. V. Gostev, B. V. Kornilov, V. V. Privezentsev, and E. I. Rau p. 288  abstract

Comparative Study of an RF and a Microwave High-Density-Plasma Source
for Plasma Immersion Ion Implantation

S. N. Averkin, A. P. Ershov, A. A. Orlikovsky,
K. V. Rudenko, and Ya. N. Sukhanov p. 292  abstract

Circuits

Chaotic Solid-State Oscillators of High Spectral Stability
with a Wideband Negative-Differential-Resistance Subsystem

V. G. Prokopenko p. 301  abstract

Interconnections

Transient Analysis of Shielded On-Chip Interconnections

V. A. Goryachev and S. M. Zakharov p. 307  abstract

Quality Control

Incoming Control of Solid-State Parts: A Review

M. I. Gorlov and A. V. Andreev p. 315  abstract

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