Contents
Russian Microelectronics
Vol. 32, No. 5, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Process Technologies
Deep-Level Effects in GaAs Microelectronics: A Review
N. P. Khuchua, L. V. Khvedelidze, M. G. Tigishvili, N. B. Gorev,
E. N. Privalov, and I. F. Kodzhespirova p. 257 abstract
Phase Formation in a TaNiN Thin Film during Its Electron-Beam Evaporation Deposition
on a Heated Si(100) Substrate
A. G. Vasiliev, A. L. Vasiliev, R. A. Zakharov, A. A. Orlikovsky,
I. A. Horin, and M. Eindou p. 275 abstract
Novel Ion-Lens Configurations: A Further Step to 2-nm Ion-Beam Lithography
V. A. Zhukov and M. M. Nesterov p. 282 abstract
Stationary High-Field Domain in Si : Zn at the Excitation Threshold of Recombination Waves
A. V. Gostev, B. V. Kornilov, V. V. Privezentsev, and E. I. Rau p. 288 abstract
Comparative Study of an RF and a Microwave High-Density-Plasma Source
for Plasma Immersion Ion Implantation
S. N. Averkin, A. P. Ershov, A. A. Orlikovsky,
K. V. Rudenko, and Ya. N. Sukhanov p. 292 abstract
Circuits
Chaotic Solid-State Oscillators of High Spectral Stability
with a Wideband Negative-Differential-Resistance Subsystem
V. G. Prokopenko p. 301 abstract
Interconnections
Transient Analysis of Shielded On-Chip Interconnections
V. A. Goryachev and S. M. Zakharov p. 307 abstract
Quality Control
Incoming Control of Solid-State Parts: A Review
M. I. Gorlov and A. V. Andreev p. 315 abstract
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