Contents
Russian Microelectronics

Vol. 31, No. 5, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Materials

X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd_{1 – x}Zn_xTe

E. M. Pashaev, V. N. Peregudov, S. N. Yakunin, A. A. Zaitsev,
T. G. Kolesnikova, and A. P. Korovin p. 271  abstract

Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds

E. I. Cherepov, E. G. Tishkovskii, V. I. Obodnikov, Yu. N. Pal’yanov, and A. G. Sokol p. 277  abstract

Process Technologies

Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis:
A Study of the Process and the Films

V. G. Erkov and S. F. Devyatova p. 282  abstract

Isotropic Plasma Etching of SiO₂ Films

A. A. Kovalevskii, V. S. Malyshev, V. V. Tsybul’skii, and V. M. Sorokin p. 290  abstract

Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices

M. I. Gorlov and D. A. Litvinenko p. 295  abstract

Si₃N₄ SOI Structures Produced by Nitrogen Ion Implantation at High Energies
and Beam Current Densities

F. F. Komarov, A. F. Komarov, and S. A. Petrov p. 305  abstract

Devices

Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer
Heterostructures by High-Resolution X-ray Diffraction

E. M. Pashaev, S. N. Yakunin, A. A. Zaitsev, V. G. Mokerov,
Yu. V. Fedorov, and R. M. Imamov p. 310  abstract

MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device

E. V. Chernyavskii, V. P. Popov, Yu. S. Pakhmutov, and L. N. Safronov p. 318  abstract

Trench-Gate MOS-Controlled Thyristor: An Evaluation

E. V. Chernyavskii, V. P. Popov, Yu. S. Pakhmutov, and L. N. Safronov p. 323  abstract

Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics

V. A. Goryachev p. 326  abstract

Instability Conditions of the Stationary Nonconducting State for the Bispin

A. P. Lysenko p. 335  abstract

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