Contents
Russian Microelectronics
Vol. 31, No. 5, 2002
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.
Materials
X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 xZnxTe
E. M. Pashaev, V. N. Peregudov, S. N. Yakunin, A. A. Zaitsev,
T. G. Kolesnikova, and A. P. Korovin p. 271 abstract
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
E. I. Cherepov, E. G. Tishkovskii, V. I. Obodnikov, Yu. N. Palyanov, and A. G. Sokol p. 277 abstract
Process Technologies
Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis:
A Study of the Process and the Films
V. G. Erkov and S. F. Devyatova p. 282 abstract
Isotropic Plasma Etching of SiO2 Films
A. A. Kovalevskii, V. S. Malyshev, V. V. Tsybulskii, and V. M. Sorokin p. 290 abstract
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
M. I. Gorlov and D. A. Litvinenko p. 295 abstract
Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies
and Beam Current Densities
F. F. Komarov, A. F. Komarov, and S. A. Petrov p. 305 abstract
Devices
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer
Heterostructures by High-Resolution X-ray Diffraction
E. M. Pashaev, S. N. Yakunin, A. A. Zaitsev, V. G. Mokerov,
Yu. V. Fedorov, and R. M. Imamov p. 310 abstract
MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device
E. V. Chernyavskii, V. P. Popov, Yu. S. Pakhmutov, and L. N. Safronov p. 318 abstract
Trench-Gate MOS-Controlled Thyristor: An Evaluation
E. V. Chernyavskii, V. P. Popov, Yu. S. Pakhmutov, and L. N. Safronov p. 323 abstract
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
V. A. Goryachev p. 326 abstract
Instability Conditions of the Stationary Nonconducting State for the Bispin
A. P. Lysenko p. 335 abstract
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