Contents

Russian Microelectronics

Vol. 52, No. 5, 2023

Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane

D. B. Murin, I. A. Chesnokov, I. A. Gogulev and A. E. Grishkov p. 337  abstract

Protective Free-Standing Films for Projection Lithography Installations in the Extreme UV Range

S. Yu. Zuev, A. Ya. Lopatin, V. I. Luchin, N. N. Salashchenko, N. N. Tsybin and N. I. Chkhalo p. 344  abstract

Simulation of the Effect of Lattice Defects on the Work of Joined Materials Separation

T. M. Makhviladze and M. E. Sarychev p. 356  abstract

A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure

V. V. Sirotkin p. 363  abstract

The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma

A. M. Efremov, S. A. Smirnov and V. B. Betelin p. 372  abstract

Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements

A. V. Prokaznikov, V. A. Paporkov, V. A. Chirikov and N. A. Evseeva p. 379  abstract

Neuromorphic Systems: Devices, Architecture, and Algorithms

K. A. Fetisenkova and A. E. Rogozhin p. 393  abstract

Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region

A. S. Novoselov and N. V. Masalskii p. 411  abstract

Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures

V. M. Mordvintsev, S. E. Kudryavtsev, V. V. Naumov and E. S. Gorlachev p. 419  abstract

Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique

Abdelmadjid Benabdelmoumene, Boualem Djezzar, Dhiaelhak Messaoud, Mohamed Boubaaya, Amel Chenouf and Boumediene Zatout p. 429  abstract

An Overview of the NBTI Phenomenon in MOS Devices

DhiaElhak Messaoud, Boualem Djezzar and Abdelkader Zitouni p. 439  abstract