Contents

Russian Microelectronics

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Vol. 50, No. 5, 2021

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Schmidt Decomposition and Coherence of Interfering Alternatives

D. V. Fastovets, Yu. I. Bogdanov, N. A. Bogdanova and V. F. Lukichev p. 287  abstract

Study of the Plasma Resistance of a High Resolution e-Beam Resist HSQ for Prototyping Nanoelectronic Devices

A. V. Miakonkikh, A. V. Shishlyannikov, A. A. Tatarintsev, V. O. Kuzmenko, K. V. Rudenko and E. S. Gornev p. 297  abstract

Specific Features of the Kinetics of the Reactive-Ion Etching of Si and SiO₂ in a CF₄ + O₂ Mixture in a Low Power Supply Mode

A. M. Efremov, V. B. Betelin and K.-H. Kwon p. 303  abstract

To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time

A. V. Fadeev and K. V. Rudenko p. 311  abstract

Computer Investigation of the Influence of Metal Contact Inhomogenees on Resistive Switching in a Heterostructure Based on Bismuth Selenide

V. V. Sirotkin p. 326  abstract

Thin-Film Solid State Lithium-Ion Batteries of the LiCoC₂/LiPON/Si@O@Al System

A. S. Rudy, A. A. Mironenko, V. V. Naumov, I. S. Fedorov, A. M. Skundin and Yu. S. Tortseva p. 333  abstract

Influence of Point Defects on the Initiation of Electromigration in an Impurity Conductor

T. M. Makhviladze and M. E. Sarychev p. 339  abstract

Physical and Topological Modeling of a Volume Condenser Structure with a Schottky Barrier

S. Sh. Rekhviashvili, D. S. Gaev and A. N. Boyko p. 347  abstract

Implementation of Interpolation in Read-out ASIC for GEM Detectors

V. V. Shumikhin, E. V. Atkin, D. A. Azarov, P. Yu. Ivanov and D. D. Normanov p. 353  abstract

Energy and Noise Characteristics of a SEPIC/CuK Converter with Bipolar Output

V. P. Babenko and V. K. Bityukov p. 357  abstract

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