Contents
Russian Microelectronics

Vol. 30, No. 5, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

In situ Diagnostics of Plasma Processes in Microelectronics:
The Current Status and Immediate Prospect, Part III

A. A. Orlikovskii and K. V. Rudenko p. 275  abstract

Phase Formation during the Surface-Diffusion Growth
of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO₂

A. G. Vasiliev, R. A. Zakharov, V. V. Rodatis, A. V. Lobintsov, A. A. Orlikovskii, and I. A. Horin p. 295  abstract

Electroforming of Si/SiO₂/W Structures with an Exposed Nanometer-Thick SiO₂ Layer

V. M. Mordvintsev and S. E. Kudryavtsev p. 303  abstract

Si/SiO₂ Structures with Quantum Size Effects: The Construction
of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si
by Incorporating a Regularly Distributed Charge into SiO₂

E. I. Gol’dman, Yu. V. Gulyaev, A. G. Zhdan, and G. V. Chucheva p. 312  abstract

Tunneling in MOS Systems: The Dependence of the Effective Barrier Height
on the Structure of the Transition Layer at the Si/SiO₂ Interface in the Presence of Impurities

G. Ya. Krasnikov, N. A. Zaitsev, and I. V. Matyushkin p. 317  abstract

Local Modification of the Optical Constants of Polymeric Films by Ion Implantation

A. V. Leont’ev p. 324  abstract

Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture

A. I. Stognij, Yu. V. Timoshkov, T. I. Orekhovskaya, S. V. Koryakin, and E. V. Lobko p. 330  abstract

The Effect of Contact Window Cleaning and Doping in BF₃ + H₂
and BF₃ + H₂ + CF₄ Plasmas on the Mo–p⁺-Si Contact Resistance

Yu. P. Snitovskii and S. F. Sen’ko p. 335  abstract

Electron-Beam Two-Stream Instability in Quantum-Effect Structures

A. E. Dubinov p. 339  abstract

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