Vol. 47, No. 5, 2018

Russian Microelectronics

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser

A. V. Tsukanov and V. G. Chekmachev p. 279 abstract

Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation

V. V. Vyurkov, R. R. Khabutdinov, A. B. Nemtsov, I. A. Semenikhin, M. K. Rudenko, K. V. Rudenko and V. F. Lukichev p. 290 abstract

Investigation of a Capacitor Array of a Composite Capacitive Touch Panel

A. I. Vlasov, A. I. Krivoshein, D. S. Terent’ev and V. A. Shakhnov p. 299 abstract

Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism

I. V. Uvarov and A. N. Kupriyanov p. 307 abstract

Reliability Investigation of 0.18-μm SOI MOS Transistors at High Temperatures

A. S. Benediktov, P. V. Ignatov, A. A. Mikhailov and A. G. Potupchik p. 317 abstract

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

A. V. Myakonkikh, K. Yu. Kuvaev, A. A. Tatarintsev, N. A. Orlikovskii, K. V. Rudenko, O. P. Guschin and E. S. Gornev p. 323 abstract

Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics

V. P. Kudrya and Yu. P. Maishev p. 332 abstract

The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer

T. M. Makhviladze and M. E. Sarychev p. 344 abstract

Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates

R. I. Batalov, R. M. Bayazitov, H. A. Novikov, I. A. Faizrakhmanov, V. A. Shustov and G. D. Ivlev p. 354 abstract

Contents

Russian Microelectronics