Contents
Russian Microelectronics

Vol. 43, No. 5, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum Calculations on Quantum Dots in Semiconductor Microcavities. Part I

A. V. Tsukanov and I. Yu. Kateev p. 315  abstract

Resistive Switching in TiN/Hf_xAl_1xO_y/HfO₂/TiN and TiN/HfO₂/Ti/TiN Structures

O. M. Orlov, E. S. Gornev, A. V. Shadrin,
S. A. Zaitsev, S. A. Morozov, and A. V. Zablotskii p. 328  abstract

Semiconductor Nanotube Plasma

P. A. Eminov, V. V. Sokolov, and S. V. Gordeeva p. 333  abstract

Generation of Fast Neutral Beams Based on Closed Drift Ion Sources

Yu. P. Maishev, S. L. Shevchuk, and V. P. Kudrya p. 345  abstract

Electrophysical Parameters and Concentrations of Active Particles
in the Plasma of HCl Mixtures with Inert and Molecular Gases

A. V. Dunaev and D. B. Murin p. 352  abstract

Electrolyte Hydrodynamics in Anodic Alumina Pores

V. A. Sokol and V. A. Yakovtseva p. 358  abstract

Electron Distribution Density in a Low Voltage SEM Probe

Yu. A. Novikov p. 361  abstract

Frequency Characteristics of a Broadband Submicron SOI-Based
Photonic Phase Modulator

N. V. Masal’skii p.371  abstract

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