Contents
Russian Microelectronics

Vol. 42, No. 5, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

A New Method of Formation of the Masking Image (Relief) Directly
during the Electron-Beam Exposure of the Resist

M. A. Bruk, E. N. Zhikharev, V. A. Kal’nov, A. V. Spirin, and D. R. Strel’tsov p. 261  abstract

The Influence of Microwave Plasma Microtreatment at Low Adsorption
on the Nanomorphology of the Surface of Silicon (100) Crystals

V. Ya. Shanygin and R. K. Yafarov p. 270  abstract

Possibilities of Thick Films of Microelectronics in the Development of the Circuitry
of Radio Engineering Systems (Review)

V. Ya. Podvigalkin p. 276  abstract

Coatings of Contact Areas of Crystals and the Traverse of Packages for Microwelding
of Internal Outputs of 3D Wares

V. V. Zenin, A. A. Stoyanov, S. V. Petrov, and B. A. Spiridonov p. 288  abstract

Electrical Parameters and Concentrations of Charged Particles in Methane Plasma

O. A. Semenova, A. M. Efremov, S. M. Barinov,
A. A. Kuchumov, and V. I. Svetsov p. 301  abstract

Switching the Direction of Circumferential Magnetization of Square Epitaxial Fe (001)
Microstructures by Spin-Polarized Current

L. A. Fomin, I. V. Malikov, K. M. Kalach, S. V. Pyatkin,
P. E. Zil’berman, and G. M. Mikhailov p. 309  abstract

Using the Models of Incompletely Specified Boolean Functions in the Synthesis
of Schemes by VHDL Descriptions

P. N. Bibilo and A. L. Solov’ev p.314  abstract

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