Contents
Russian Microelectronics

Vol. 39, No. 5, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Personalia

Commemorating Vladimir G. Mokerov: The 70th Anniversary of His Birth p. 299

Micro- and Nanostructure Dynamics

Nondestructive Contactless Electron-Beam Diagnostics of Microelectronic Device Structures

A. F. Aleksandrov, S. A. Ditsman, F. A. Luk’yanov, N. A. Orlikovskii, E. I. Rau, and R. A. Sennov p. 303  abstract

Micro- and Nanoelectronic Devices

Influence of the Pressure of the Gas Medium and Duration of Controlling Pulses
on the Stability of Characteristics of Memory Cells Based on Electroformed Si–SiO₂–W Structures

V. M. Mordvintsev, S. E. Kudryavtsev, V. L. Levin, and L. A. Tsvetkova p. 313  abstract

A Generalized Theory of Charge Transport in Low-Barrier Mott Diodes with Near-Surface
-Doping: Comparison with Experimental Data

V. I. Shashkin and A. V. Murel’ p. 323  abstract

GaAs/AlAs Resonant-Tunneling Diode for Subharmonic Mixers

N. V. Alkeev, S. V. Averin, A. A. Dorofeev, N. B. Gladysheva, and M. Yu. Torgashin p. 331  abstract

Magnetoconcentration Effect on a Base pn Junction of a Bipolar Magnetotransistor

R. D. Tikhonov p. 340  abstract

A Table MOS Transistor Model Parameter Control

V. V. Denisenko p. 352  abstract

Low-Temperature Plasma Diagnostics

Effect of Additions of Ar and He on the Parameters and Composition of the HBr Plasma

A. A. Smirnov, A. M. Efremov, and V. I. Svettsov p.366  abstract

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