Contents
Russian Microelectronics

Vol. 38, No. 4, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Micro- and Nanoelectronic Devices

Semiconductor Nanowire Sensors

I. G. Neizvestny p. 223  abstract

Dual-Collector Bipolar Magnetotransistor: Defining and Determining Its Magnetic-Field Sensitivity

R. D. Tikhonov p. 239  abstract

Micro- and Nanostructure Characterization

Dependence of the Transversal Magneto-Optic Kerr Effect on the Incidence Angle
of Light for Ultrathin Films of Cobalt and Co/Cu/Co Multilayers

V. V. Naumov, V. A. Paporkov, and M. V. Lokhankin p. 251  abstract

An Automated Stand for Express-Diagnostics of Magnetoresistive Structures

O. S. Trushin, D. A. Kokanov, V. F. Bochkarev, V. V. Naumov, E. Yu. Buchin p. 257  abstract

Device and Structure Modeling
and Simulation

Simulating the Exposure of ICs to Voltage Surges Caused by Nuclear Explosions

K. A. Epifantsev, O. A. Gerasimchuk, and P. K. Skorobogatov p. 260  abstract

The Accuracy and Validity of the Simulation of VLSI MOS Transistors

V. V. Denisenko p. 273  abstract

Computational Electrochemistry

Calculation of the Concentration Profile of Copper in the TiN/CoSi₂/Si System during Thermal Heating

V. I. Rudakov and V. N. Gusev p. 279  abstract

Circuit Analysis and Synthesis

Constraint Graph Used to Minimize On-Chip Wiring Area with Regard to Electromigration
and Conductor Voltage Drop

A. S. Plekhanov p. 285  abstract

Information for Authors p. 288

Pleiades Publishing home page | journal home page | top

If you have any problems with this server, contact webmaster.