/ Interperiodica Publishing (Russia). Distributed worldwide by Plenum / Consultants Bureau. Russian Microelectronics ISSN 1063-7397.
Contents
Russian Microelectronics
Vol. 26, No. 4, 1997
Simultaneous English language translation of the journal is available from / Interperiodica Publishing (Russia).
Distributed worldwide by Plenum / Consultants Bureau. Russian Microelectronics ISSN 1063-7397.
Information Microwave Electronics
V. I. Gvozdev, A. S. Petrov, and N. I. Tatarenko p. 207 abstract
Repairable RAM Design
V. N. Yarmolik, Yu. V. Klimets, and E. van de Gor p. 226 abstract
Self-forming Technology for Permalloy Bubble Memory Devices
A. D. Krivospitskii, A. A. Okshin, A. A. Orlikovskii, Yu. F. Semin, and V. A. Skidanov p. 231 abstract
Thin Ferroelectric Films as DRAM Components
I. L. Baginskii and E. G. Kostsov p. 237 abstract
Anodic Oxidation for Quality Control of Buffer Layers in GaAs Epitaxial Structures
on Semi-Insulating Substrates
P. S. Belousov, A. S. Tager , Yu. Yu. Fedorov, and S. N. Filippov p. 245 abstract
Scanning Probe Microscopy Combining STM and AFM Modes
A. O. Golubok, I. D. Sapozhnikov, A. M. Solov’ev, and S. Ya. Tipisev p. 249 abstract
The Effect of Group IIIB and Group IV Dopants on the Microhardness of Single-Crystal Silicon
D. I. Brinkevich, S. A. Vabishchevich, and V. V. Petrov p. 254 abstract
The Properties of Ag–n-GaAs Schottky-Barrier Contacts
V. L. Kostenko and L. B. Dmitrieva p. 258 abstract
Defects in Multilayer Silicon-based Compositions
V. L. Kostenko, I. E. Shukhina, and O. P. Golovko p. 261 abstract
Spectral Correlation Analysis of Experimental Data on the Electron Scattering Intensity
Curve Taken in a Diffraction Experiment
P. A. Arutyunov, A. L. Tolstikhina, and I. N. Krasivskii p. 264 abstract
Submicron VLSI Elements with Aligned Vertical MOS Transistors
V. V. Rakitin and E. I. Filippov p. 271 abstract
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