Contents
Russian Microelectronics

Vol. 36, No. 4, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Modeling of Semiconductor Devices and Integral Circuits

Model of the Diode-Connected GaAs Schottky-Gate Field-Effect Transistor

V. I. Starosel’skii, S. B. Burzin, S. S. Shmelev, and N. V. Guminov p. 209  abstract

The Macromodel of an Operational Amplifier with Current Output

Yu. B. Rogatkin p. 221  abstract

Characterization

Photoluminescence Characterization Technique for Resonant-Tunneling Structures
Based on a Long-Period GaAs/AlGaAs Superlattice, Applicable at Different Stages of Fabrication

A. A. Belov, I. P. Kazakov, A. L. Karuzskii, Yu. A. Mityagin, V. N. Murzin,
A. V. Perestoronin, S. S. Shmelev, and V. I. Tsekhosh p. 227  abstract

Plasmochemical Etching

Modeling of Deep Grooving of Silicon in the Process of Plasmochemical Cyclic Etching/Passivation

A. S. Shumilov and I. I. Amirov p. 241  abstract

Thin Films

LPCVD Borophosphosilicate-Glass Films: Deposition and Properties

A. S. Turtsevich, O. Yu. Nalivaiko, and L. P. Anufriev p. 251  abstract

IC Reliability

ARIMA Models Used to Predict the Time to Degradation Failure of TTL ICs

M. I. Gorlov and A. V. Strogonov p. 261  abstract

Detecting Multiple Errors in RAM by Self-Adjusting Output Data Compression

A. A. Ivaniuk, S. B. Musin, and V. N. Yarmolik p. 271  abstract

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