Contents
Russian Microelectronics

Vol. 35, No. 4, 2006

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Materials and Microstructure Characterization

CVD Diamond Coating of AlN Ceramic Substrates to Enhance Heat Removal

V. G. Ralchenko, A. V. Saveliev, A. F. Popovich,
I. I. Vlasov, S. V. Voronina, and E. E. Ashkinazi p. 205  abstract

Degradation Pattern of Thin HfO₂ Films on Si(100) under Ultrahigh-Vacuum
Annealing: An Investigation by X-ray Photoelectron Spectroscopy
and Low-Energy Ion Scattering

A. V. Zenkevich, Y. Y. Lebedinskii, N. S. Barantsev,
V. N. Nevolin, V. S. Kulikauskas, G. Scarel, and M. Fanciulli p. 210  abstract

Process Technologies

Periodically Doped MOSFET Structure

V. Ya. Uritsky and A. Yu. Savenko p. 216  abstract

Influence of Defects in Gate-Oxide Peripheral Regions
on the Electrical Characteristics of MOS Structures

A. Yu. Savenko, V. Ya. Uritsky, and V. V. Hramthzov p. 222  abstract

Testing the Electromigration Resistance of Al Metallization Patterns
by Electrical-Resistance Measurement

M. I. Gorlov, V. I. Plebanovich, and A. V. Strogonov p. 235  abstract

Circuit Analysis and Synthesis

Integrated Receivers for Wireless Communications: A Review

A. S. Korotkov p. 243  abstract

PRALU-to-VHDL Conversion of Parallel-Algorithm Descriptions for Control Units

P. N. Bibilo p. 262  abstract

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