Contents
Russian Microelectronics

Vol. 34, No. 4, 2005

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Process Technologies

Fabrication of Strain-Relaxed Si_1–xGe_x/Si(001) Buffer
Layers of Low Surface Roughness

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil’nik, O. A. Kuznetsov,
A. V. Novikov, V. A. Perevoshchikov, and M. V. Shaleev p. 203  abstract

Low-Temperature Plasma Processing

Electron Cyclotron Resonance Used in Low-Pressure Microwave
Plasma Reactors with Permanent Magnets

A. B. Petrin p. 210  abstract

Evaluating the Wall-Recombination Constant of Cl Atoms
in Cl₂–Ar Plasmas of Different Ar Percentage

Yu. V. Kirillov and D. V. Sitanov p. 217  abstract

Micro- and Nanoelectronic Devices

Theory of the Vacuum Nanotriode, Part 2: The Possibility of Negative Transconductance

V. A. Zhukov p. 222  abstract

GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

G. M. Lezhneva, R. G. Melkadze, and L. V. Khvedelidze p. 229  abstract

Materials and Microstructure Characterization

Si/Si_1–xGe_x Superlattice Structure from X-ray-Scattering Data

S. N. Yakunin, E. M. Pashaev, A. A. Zaitsev, I. A. Subbotin,
M. M. Rzaev, and R. M. Imamov p. 242  abstract

Microelectromechanical Systems

Stresses near the Edges of a Square Silicon Membrane

V. A. Gridchin, V. V. Grichenko, V. M. Lubimsky, and A. V. Shaporin p. 252  abstract

Circuit Analysis and Synthesis

Phase–Amplitude Relationship of One-Port Temperature-Stable Circuits Based
on an Ultrawideband Current-Limiting BJT Amplifier
and Designed to Provide Negative Resistance

V. G. Prokopenko p. 259  abstract

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