Vol. 52, No. 4, 2023

Russian Microelectronics

Tomography of Detectors Taking Dead Time into Account

Yu. I. Bogdanov, K. G. Katamadze, N. A. Borshchevskaya, G. V. Avosopiants, N. A. Bogdanova, S. P. Kulik and V. F. Lukichev p. 221 abstract

Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric

N. V. Masalskii p. 228 abstract

Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film

I. A. Kuznetsova, O. V. Savenko and D. N. Romanov p. 233 abstract

Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation

A. A. Glushko, S. A. Morozov and M. G. Chistyakov p. 253 abstract

Single Event Displacement Effects in a VLSI

A. I. Chumakov p. 260 abstract

Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF₄ + O₂, CHF₃ + O₂, and C₄F₈ + O₂ Mixtures

A. M. Efremov, A. V. Bobylev and K.-H. Kwon p. 267 abstract

Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes

N. S. Koval’chuk, S. B. Lastovskii, V. B. Odzhaev, A. N. Petlitskii, V. S. Prosolovich, D. V. Shestovsky, V. Yu. Yavid and Yu. N. Yankovskii p. 276 abstract

Multilevel Memristive Structures Based on YBa₂Cu₃O_7–δ Epitaxial Films

N. A. Tulina, A. N. Rossolenko, I. Y. Borisenko and A. A. Ivanov p. 283 abstract

Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation

M. V. Evstafieva, M. A. Knyazev, V. I. Korepanov, A. N. Red’kin, D. V. Roschupkin and E. E. Yakimov p. 290 abstract

Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature

A. V. Saenko, Z. E. Vakulov, V. S. Klimin, G. E. Bilyk and S. P. Malyukov p. 297 abstract

Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition

A. V. Fadeev, A. V. Myakon’kikh, E. A. Smirnova, S. G. Simakin and K. V. Rudenko p. 303 abstract

Formation of Polymer Threads with a Nanosized Aluminum Topology

P. P. Maltsev, A. A. Ganzha, V. Yu. Pavlov, A. O. Mikhalev and A. I. Kozlitin p. 312 abstract

Polymer Liners with Cu-MWCNT based HCTSVs to Reduce Crosstalk Effects

Katepogu Rajkumar and G. Umamaheswara Reddy p. 317 abstract

Optoelectronic Properties of Benzimidazobenzophenanthroline Thin Film

Dyari Mustafa Mamand and Hiwa Mohammad Qadr p. 325 abstract

Contents

Russian Microelectronics