Contents

Russian Microelectronics

Vol. 50, No. 4, 2021

Theoretical Base and Industrial Implementation of Frontal Photopolymerization with an Extremely Small Width of the Front of the Reaction

V. M. Treushnikov, V. V. Treushnikov and V. V. Semenov p. 211  abstract

Application of the Spectral Ellipsometry Method to Study the Processes of Atomic Layer Deposition

A. V. Miakonkikh, E. A. Smirnova and I. E. Clemente p. 230  abstract

Transformation of the Spectra of a Attenuated Total Reflection when Drying a Diazoquinone-Novolach Photoresist

D. I. Brinkevich, S. D. Brinkevich, A. N. Petlitsky and V. S. Prosolovich p. 239  abstract

Nanoscale Structuring of Gallium Arsenide in High-Frequency and Glow Discharge Plasma

A. V. Dunaev, D. V. Barabanov and T. A. Zhukova p. 246  abstract

Comparative Analysis of Modeling CMOS Majority Gates When Collecting a Charge from Tracks of Single Ionizing Particles

V. Ya. Stenin and Yu. V. Katunin p. 253  abstract

Simulation of Nucleation of Multiple Component 2D GaSxSe1 – x Using an Evolutionary Equation

S. M. Asadov p. 264  abstract

Self-Heating Effect in Submicronic SOI-CMOS Transistors

S. V. Rumyantsev, A. S. Novoselov and N. V. Masalsky p. 278  abstract