Contents
Russian Microelectronics

Vol. 30, No. 4, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors:
Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method,
and Thermoacoustic Detection

E. I. Rau, A. V. Gostev, Zhu Shiqiu, D. Phang, D. Chan, D. Thong, and W. Wong p. 207  abstract

Artifacts in Atomic Force Microscopy

R. V. Gainutdinov and P. A. Arutyunov p. 219  abstract

Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies

V. Yu. Kireev and A. S. Tsimbalov p. 225  abstract

Artificial Potential Relief in Carbon Films and Associated Heterostructures

V. M. Elinson p. 236  abstract

Significant Improvement of Transistor Transconductance
and Speed by Using a Graded Channel

V. A. Gergel’ and V. G. Mokerov p. 243  abstract

Model Analysis of Transients in On-Chip Interconnections

S. M. Zakharov p. 245  abstract

Emitter Current Push-Out Effect under Avalanche Multiplication in the Collector p–n Junction

V. A. Sergeev p. 254  abstract

On Increasing the Switching Rate in a Single-Domain Magnetooptic Cell

V. V. Randoshkin, A. M. Saletskii, N. N. Sysoev, and A. Ya. Chervonenkis p. 258  abstract

Cleaning and Doping of Silicon in a BF₃ Plasma during Fabrication of Ohmic Contacts

A. L. Danilyuk and Yu. P. Snitovskii p. 261  abstract

The Effect of Electroactive Defects in the Gate Oxide on the Threshold Voltage
of a Submicron MOS Transistor

V. Ya. Uritskii and A. P. Krylov p. 267  abstract

Analysis of the Photodetector Array Spectrum Using the Influence Function

V. P. Fedosov p. 269  abstract

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