Vol. 48, No. 4, 2019

Russian Microelectronics

Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS_{1 –} _хSe_х Materials

S. M. Asadov, S. N. Mustafaeva, V. F. Lukichev and D. T. Guseinov p. 203 abstract

Estimating the Interrelation between the Rate of Atomic Layer Deposition of Thin Platinum-Group Metal Films and the Molecular Mass of Reactant Precursors

V. Yu. Vasilyev p. 208 abstract

Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method

A. V. Fadeev and K. V. Rudenko p. 220 abstract

Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge

Yu. K. Ezhovskii and S. V. Mikhailovskii p. 229 abstract

The Effect of an N₂ Additive on the GaAs Etching Rate in CF₂Cl₂ Plasma

S. A. Pivovarenok p. 236 abstract

Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into Groups

A. L. Stempkovskii, D. V. Tel’pukhov, T. D. Zhukova, A. I. Demeneva, V. V. Nadolenko and S. I. Gurov p. 240 abstract

Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs

A. I. Chumakov, D. V. Bobrovsky, A. A. Pechenkin, D. V. Savchenkov, G. S. Sorokoumov and I. I. Shvetsov-Shilovskiy p. 250 abstract

Memristor Based Pulse Train Generator

V. V. Rakitin and S. G. Rusakov p. 255 abstract

Microconsuming 8–12 GHz GaN Power Amplifiers

S. A. Gamkrelidze, D. L. Gnatyuk, A. V. Zuev, M. V. Maitama, P. P. Mal’tsev, A. O. Mikhalev and Yu. V. Fedorov p. 262 abstract

Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology

A. B. Boruzdina, Yu. M. Gerasimov, N. G. Grigor’ev, A. V. Kobylyatskii, A. V. Ulanova and I. I. Shvetsov-Shilovskii p. 268 abstract

Contents

Russian Microelectronics