Contents

Russian Microelectronics

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Vol. 47, No. 4, 2018

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

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Features of the Current Flow in Injection Structures Based on PbSnTe:In Films

D. V. Ishchenko, I. G. Neizvestny, N. S. Pashchin and V. N. Sherstyakova p. 221  abstract

A Thin-Film Platform for Chemical Gas Sensors

I. V. Roslyakov, K. S. Napolskii, V. S. Stolyarov, E. E. Karpov, A. V. Ivashev and V. N. Surtaev p. 226  abstract

Structuring Copper in the Plasma Medium of a High-Frequency Discharge

A. V. Dunaev and D. B. Murin p. 234  abstract

On the Effect of the Ratio of Concentrations of Fluorocarbon Components in a CF₄ + C₄F₈ + Ar Mixture on the Parameters of Plasma and SiO₂/Si Etching Selectivity

A. M. Efremov, D. B. Murin and K.-H. Kwon p. 239  abstract

The Effect of the Mixture Composition on the Electrophysical Parameters of HCl/N₂ Plasma

S. A. Pivovarenok p. 247  abstract

Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals

R. K. Yafarov and V. P. Timoshenkov p. 251  abstract

Simulation of the Characteristics of Double-Gate Asymmetrically Doped SOI CMOS Nanotransistors

N. V. Masalsky p. 259  abstract

Quantum Gates with Spin States in Continuous Microwave Field

A. F. Zinovieva, A. V. Nenashev, A. A. Koshkarev, T. S. Zarodnyuk, A. Yu. Gornov and A. V. Dvurechenskii p. 268  abstract

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