Contents

Russian Microelectronics

Vol. 45, No. 4, 2016

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Practical Aspects of Producing MIS Structures with Good Prospects Using Atomic Layer Deposition Technology

A. J. Aliabev and A. S. Korotkov p. 229  abstract

Mode Optimization of Retrograde Pocket Doping in SOI-MOS VLSI Transistors

A. V. Amirkhanov, S. I. Volkov, A. A. Glushko, L. A. Zinchenko, V. V. Makarchuk and V. A. Shakhnov p. 237  abstract

Secondary Ion Mass Spectrometry Study of the Formation of a Nanometer Oxide Film on a Titanium Nitride Surface

V. M. Mordvintsev, V. V. Naumov and S. G. Simakin p. 242  abstract

Relaxation Modification of the Morphology of Atomically Clean Silicon (100) Crystal Surfaces after Treatment with SHF Plasma

R. K. Yafarov p. 256  abstract

Investigation of the Properties and Manufacturing Features of Nonvolatile FRAM Memory Based on Atomic Layer Deposition

O. M. Orlov, A. M. Markeev, A. V. Zenkevich, A. G. Chernikova, M. V. Spiridonov, R. A. Izmaylov and E. S. Gornev p. 262  abstract

Characteristics of the Kinetics of Periodic Structures СМР for a Nonlinear Pressure Dependence of the Polishing Rate

R. V. Goldstein, T. M. Makhviladze and M. E. Sarychev p. 270  abstract

Kinetics of Neutral Particles in HCl and HBr Plasmas at Low Pressures and High Electron Concentrations

A. M. Efremov p. 278  abstract

Thin Film Negative Electrode Based on Silicon Composite for Lithium-Ion Batteries

A. A. Airapetov, S. V. Vasiliev, T. L. Kulova, M. E. Lebedev, A. V. Metlitskaya, A. A. Mironenko, N. F. Nikol’skaya, V. V. Odinokov, G. Ya. Pavlov, D. E. Pukhov, A. S. Rudyi, A. M. Skundin, V. A. Sologub, I. S. Fedorov and A. B. Churilov p. 285  abstract

A Method for Registration of Multiple Cell Upsets in High Capacity Memory Cells Induced by Single Nuclear Particles

A. B. Boruzdina, A. V. Ulanova, A. I. Chumakov and A. V. Yanenko p. 292  abstract