Contents
Russian Microelectronics

Vol. 43, No. 4, 2014

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Nonvolatile Memory Cells Based on the Effect of Resistive Switching
in Depth-Graded Ternary Hf_xAl_1–xO_y Oxide Films

O. M. Orlov, A. A. Chuprik, A. S. Baturin, E. S. Gornev, K. V. Bulakh, K. V. Egorov,
A. A. Kuzin, D. V. Negrov, S. A. Zaitsev, A. M. Markeev,
Yu. Yu. Lebedinskii, and A. V. Zablotskii p. 239  abstract

Investigation of Electrical Properties of MOS Structures with Silicon Nitride
Films Doped with Rare Earth Elements

A. A. Kovalevsky, A. S. Strogova, N. S. Strogova, and N. V. Babushkina p. 246  abstract

Verification of the Algorithm for Emission Tomography of Plasma Inhomogeneities
in a Plasma-Chemical Reactor Using the Langmuir Multiprobe

A. V. Fadeev and K. V. Rudenko p. 252  abstract

A Virtual Scanning Electron Microscope. 3. A Semiempirical
Model of the SEM Signal Generation

Yu. A. Novikov p. 258  abstract

Formation of the Architecture of Nanodimensional Polymer Media with Quantum Dots

V. Ya. Podvigalkin p. 270  abstract

High-Mode Wave Reliefs in a Spatially Nonlocal Erosion Model

A. S. Rudyi, A. N. Kulikov, D. A. Kulikov, and A. V. Metlitskaya p. 277  abstract

Investigation into the Diffusion of Boron, Phosphorus, and Arsenic
in Silicon during Annealing in a Nonisothermal Reactor

V. I. Rudakov, V. V. Ovcharov, V. F. Lukichev, and Yu. I. Denisenko p. 284  abstract

Modification of Electronic Properties of the Surface of (100) Silicon Crystals
under Microwave Plasma Micromachining

R. K. Yafarov and S. A. Klimova p. 299  abstract

Method for Analyzing the Equivalence of X-ray Images of Microcircuits
for Estimating the Radiation Resistance

Yu. A. Ozhegin p.308  abstract

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