Contents
Russian Microelectronics

Vol. 42, No. 4, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum Operations on Charge Qubits with the Electrostatic Control in Semiconductor Cavities

A. V. Tsukanov and I. Yu. Kateev p. 197  abstract

Plasma Parameters and Mechanisms of GaAs Reactive Plasma Etching in Mixtures
of HCl with Argon and Chlorine

A. V. Dunaev, S. A. Pivovarenok, A. M. Efremov, V. I. Svettsov,
S. P. Kapinos, and A. V. Yudina p. 212  abstract

Influence of Doping the Base Surface on Parameters of a Bipolar Dual-Collector
Lateral Magnetotransistor

A. Yu. Krasyukov, R. D. Tikhonov, and A. A. Cheremisinov p. 220  abstract

Simulating the Deposition and Synthesis of Amorphous Hydrogenated Carbon Films

V. A. Tarala p. 230  abstract

Formation of the Wave Nanorelief at Surface Erosion by Ion Bombardment
within the Bradley–Harper Model

A. V. Metlitskaya, A. N. Kulikov, and A. S. Rudy p. 238  abstract

Photovoltaic Effect in a Structure Based on Amorphous and Nanoporous Silicon Formed
by Plasma Immersion Ion Implantation

A. V. Myakon’kikh, A. E. Rogozhin, K. V. Rudenko, and V. F. Lukichev p. 246  abstract

The Behavioral Model of a Split Capacitor Array Involved in the Successive
Approximation Register ADC and Taking into Account the Effect of Parasitic Capacitors

D. L. Osipov, Yu. I. Bocharov, and V. A. Butuzov p.253  abstract

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