Contents
Russian Microelectronics

Vol. 41, No. 4, 2012

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Single-Event-Effect Sensetivity Characterization of LSI Circuits
with a Laser-Based and a Pulsed Gamma-Ray Testing Facilities Used in Combination

A. I. Chumakov, A. L. Vasil’ev, A. A. Pechenkin, D. V. Savchenkov,
A. S. Tararaksin, and A. V. Yanenko p. 221  abstract

An Estimate of the FPGA Sensitivity to Effects of Single Nuclear Particles

D. V. Bobrovskii, O. A. Kalashnikov, and P. V. Nekrasov p. 226  abstract

Simulation of the Local Effect of Nuclear Particles on 65-nm
CMOS DICE Memory Cells

V. Ya. Stenin and P. V. Stepanov p. 231  abstract

Simulation of the Local Effect of Nuclear Particles on 65-nm
CMOS Elements of Two-Phase Logics

Yu. V. Katunin and V. Ya. Stenin p. 239  abstract

An Analysis of the Radiation Behavior of Pulse Voltage Stabilizers

L. N. Kessarinskiy, D. V. Boychenko, and A. Y. Nikiforov p. 251  abstract

Radiation-Induced Degradation in the Dynamic Parameters
of Memory Chips

A. B. Boruzdina, A. V. Ulanova, N. G. Grigor’ev, and A. Yu. Nikiforov p. 259  abstract

Investigation of the Possibility to Develop Radiation-Hardness LSIs
for Navigational Purposes According to the 0.35-m Domestic CMOS SOI Technology

V. V. Elesin, G. N. Nazarova, G. V. Chukov, Yu. A. Kabal’nov, and A. A. Titarenko p. 266  abstract

Electron Transport in Thin-Base Transistor Structures Exposed
to High-Energy Photons

A. S. Puzanov and S. V. Obolensky p.278  abstract

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