Contents
Russian Microelectronics

Vol. 39, No. 4, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Quantum Information Science

Information Aspects of “Which-Path” Interference Experiments with Microparticles

Yu. I. Bogdanov, K. A. Valiev, S. A. Nuyanzin, and A. K. Gavrichenko p. 221  abstract

Micro- and Nanoelectronic Devices

Simulation of Properties of the Channels of Silicon MOS Transistors
on the Deforming Germanium Substrate

V. V. Filippov and B. K. Petrov p. 243  abstract

Manufacturing Processes and Equipment

A System for Precision Reactive Ion-Beam Etching of Nanostructures for Field-Emission Devices

Yu. P. Maishev, , Yu. P. Terent’ev, S. L. Shevchuk, N. I. Tatarenko, and V. A. Golikov p. 252  abstract

Low-Temperature Pulsed CVD of Thin Layers of Metallic Ruthenium
for Microelectronics and Nanoelectronics. Part 3: Nucleation Phenomena
during the Growth of Ruthenium Layers

V. Yu. Vasilyev p. 262  abstract

Thin Films

Formation and Properties of Thin-Film Composites Vanadium Oxide/Porous Anodic Aluminum Oxide

E. A. Outkina, A. I. Vorobyova, and A. A. Khodin p. 273  abstract

Circuit Analysis and Synthesis

Specific Features of Constructional Optimization of the Parameters of CMOS Memory Devices

V. V. Shubin p. 281  abstract

Determination of the Delay of a Programmable Logic Array

N. A. Avdeev and P. N. Bibilo p.288  abstract

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