Contents
Russian Microelectronics

Vol. 29, No. 4, 2000

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by Kluwer Academic / Plenum Publishers. Russian Microelectronics ISSN 1063-7397.

Matvei I. Elinson (Memorial) p. 215

The Feasibility of Creating a High-Speed Semiconductor–Semimetal–Semiconductor Transistor

V. N. Lutskii, T. N. Pinsker, and M. I. Elinson^† p. 217  abstract

Principles of Flicker Noise Spectroscopy and Its Application to Disordered Semiconductors:
Ion-Implanted Silicon

M. I. Makoviichuk p. 219  abstract

Reactive Ion Etching of Copper in an RF N₂ + BCl₃ + Cl₂ Plasma

V. G. Mal’shakov, A. E. Berdnikov, A. A. Popov, and V. N. Gusev p. 235  abstract

Thermal Oxidation of Indium Phosphide in the Presence of Lead, Zirconium,
and Titanium Oxides

I. Ya. Mittova, A. V. Shukarev, V. V. Soshnikov, and G. G. Bubnova p. 241  abstract

Deep Traps in Heteroepitaxial SOS Layers Subjected to Various Treatments

A. S. Adonin, A. V. Bespalov, T. S. Kitichenko, T. G. Kolesnikova,
A. P. Korovin, and M. V. Shiryaeva p. 246  abstract

Simulation of Epitaxial Growth under Ion-Beam Sputtering

O. S. Trushin, V. F. Bochkarev, and V. V. Naumov p. 261  abstract

Synthesis of Multifunction Logic Modules Built on Hierarchic Neural Networks

V. N. Lopin p. 273  abstract

Modeling of the Gate Junction in GaAs MESFETs

N. G. Tarnovskii, V. S. Osadchuk, and A. V. Osadchuk p. 279  abstract

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