Contents
Russian Microelectronics

Vol. 38, No. 3, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Russian Microelectronics ISSN 1063-7397.

Plasma Processing

Plasma Parameters and Etching Mechanisms of Metals and Semiconductors in Hydrogen Chloride

A. M. Efremov, S. A. Pivovarenok, and V. I. Svettsov p. 147  abstract

Obtaining Multicomponent Films by the Plasma-Stimulated Method

V. F. Bochkarev and V. V. Ovcharov p. 160  abstract

The Effect of Electromagnetic Fields on the Process of Formation of Ultrathin Fe–Ni Films
during Their Deposition under a Plasma-Stimulated Deposition

V. F. Bochkarev and E. Yu. Buchin p. 165  abstract

Modeling and Simulation

Mathematical Simulation of an Inclined Neutralization Channel
for a Plasma Source of Neutral Beams

A. V. Degtyarev, V. P. Kudrya, and Yu. P. Maishev p. 171  abstract

A Study of the Magnetic Characteristics of Permalloy Nanostructures by Micromagnetic Simulation

O. S. Trushin, N. Barabanova, and V. P. Alekseev p. 180  abstract

Analysis of the Dipole Matrix Elements of Electronic Optical Transitions in the /Si System

A. N. Voron’ko p. 186  abstract

Quantum-Computing Devices

The Computable Measure of Quantum Entanglement of Multiqubit States

A. Yu. Chernyavskiy p. 199  abstract

Circuit Analysis and Synthesis

The Design of Ternary Logic Units on the Basis of the Standard MOS Technology

D. V. Morozov, M. M. Pilipko, and A. S. Korotkov p. 206  abstract

Flip-flop Device with State Actuation

N. M. Saf’yannikov and P. N. Bondarenko p. 219  abstract

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