Contents
Russian Microelectronics

Vol. 26, No. 3, 1997

Simultaneous English language translation of the journal is available from / Interperiodica Publishing (Russia).
Distributed worldwide by Plenum / Consultants Bureau. Russian Microelectronics ISSN 1063-7397.

Atomic Force Microscopy for Metrology of Micro- and Nanostructures

A. A. Bukharaev, N. V. Berdunov, D. V. Ovchinnikov, and K. M. Salikhov p. 137  abstract

On Detecting Latent Process Factors by Entropy Minimization

Yu. I. Bogdanov and A. A. Romanov p. 149  abstract

Bootstrap, Data Structures, and Process Control in Microelectronics

Yu. I. Bogdanov and N. A. Bogdanova p. 155  abstract

Low-Noise Analogue ICs in Charge-Sensitive Preamplifiers

T. M. Agakhanyan p. 159  abstract

Photo- and Electroluminescence in SiN_x(Si) Composite Nanostructures

V. G. Baru, M. I. Elinson, V. A. Zhitov, L. Yu. Zakharov, V. I. Pokalyakin,
G. V. Stepanov, and A. P. Chernushich p. 169  abstract

Optical and Electrophysical Properties of Superthin Photosensitive Structures
Based on Schottky Barriers

V. P. Sondaevskii, V. P. Kalinushkin, V. M. Akimov, V. E. Bragilevskii,
V. P. Liseikin, N. V. Komarov, A. I. Patrashin, A. V. Savin, and S. V. Shchukin p. 172  abstract

Resonance Effects in High-Frequency Admittance Observed in Field-Effect Transistors
with a One-Dimensional Quantum Ballistic Channel

V. A. Sablikov and E. V. Chenskii p. 178  abstract

The Conductance of a Quantum Channel with Rough Walls

V. A. Fedirko and V. V. V’yurkov p. 184  abstract

Microelectronic Neural Associative Memory without Interneuron Links

Yu. I. Balkarei, M. G. Evtikhov, M. I. Elinson, A. S. Kogan, and Yu. N. Orlov p. 188  abstract

Express Time-resolved Emission Actinometric Measurement of the Kinetic Parameters
of Plasmochemical Reactions in an RF Discharge

M. K. Abachev, Kh. V. Gazarov, V. A. Galperin, V. N. Zhogun, V. Yu. Pashkov,
N. A. Ponomareva, A. A. Orlikovskii, and A. V. Tyablikov p. 192  abstract

Generation–Recombination Properties of Si/Leadborosilicate Glass Transition Layers

S. I. Vlasov and T. P. Adylov p. 197  abstract

Diffraction Focusing with Synchrotron Radiation Beams

S. N. Mazurenko, A. V. Nikitin, and O. B. Potryvaeva p. 199  abstract

Growth Kinetics of Thermal Silicon Dioxide at Low Oxygen Pressure

S. F. Devyatova, V. G. Erkov, and E. L. Molodtsova p. 202  abstract

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